TK9A65W,S5X datasheet, PDF - EEWORLD Datasheet

TK9A65W,S5X: DescriptionMOSFET N-CH 650V 9.3A TO-220SIS; Categorysemiconductor Discrete semiconductor; File Size380KB，10 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/; Environmental Compliance

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TK9A65W,S5X Overview

MOSFET N-CH 650V 9.3A TO-220SIS

Parameter Name	Attribute value
FET type	N channel
technology	MOSFET (metal oxide)
Drain-source voltage (Vdss)	650V
Current - Continuous Drain (Id) at 25°C	9.3A（Ta）
Drive voltage (maximum Rds On, minimum Rds On)	10V
Rds On (maximum value) when different Id, Vgs	500 milliohms @ 4.6A, 10V
Vgs (th) (maximum value) when different Id	3.5V @ 350µA
Gate charge (Qg) at different Vgs (maximum value)	20nC @ 10V
Vgs (maximum value)	±30V
Input capacitance (Ciss) at different Vds (maximum value)	700pF @ 300V
FET function	-
Power dissipation (maximum)	30W（Tc）
Operating temperature	150°C（TJ）
Installation type	Through hole
Supplier device packaging	TO-220SIS
Package/casing	TO-220-3 whole package

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