BAW56FN3 datasheet, PDF - EEWORLD Datasheet

BAW56FN3: Description0.15 A, 75 V, 2 ELEMENT, SILICON, SIGNAL DIODE; CategoryDiscrete semiconductor diode; File Size113KB，3 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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BAW56FN3 Overview

0.15 A, 75 V, 2 ELEMENT, SILICON, SIGNAL DIODE

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	PANJIT
Parts packaging code	DFN
package instruction	ROHS COMPLIANT, PLASTIC, DFN-3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	ANODE
Configuration	COMMON ANODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	R-PBCC-N3
Number of components	2
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	0.15 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum power dissipation	0.25 W
Maximum repetitive peak reverse voltage	75 V
Maximum reverse recovery time	0.004 µs
surface mount	YES
Terminal form	NO LEAD
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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