DDR DRAM, 64MX4, 0.75ns, CMOS, PBGA60, 14 X 8 MM, PLASTIC, FBGA-60
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | Micron Technology |
package instruction | TBGA, |
Reach Compliance Code | not_compliant |
ECCN code | EAR99 |
Is Samacsys | N |
access mode | FOUR BANK PAGE BURST |
Maximum access time | 0.75 ns |
Other features | AUTO/SELF REFRESH |
JESD-30 code | R-PBGA-B60 |
JESD-609 code | e0 |
length | 14 mm |
memory density | 268435456 bit |
Memory IC Type | DDR DRAM |
memory width | 4 |
Number of functions | 1 |
Number of ports | 1 |
Number of terminals | 60 |
word count | 67108864 words |
character code | 64000000 |
Operating mode | SYNCHRONOUS |
Maximum operating temperature | 85 °C |
Minimum operating temperature | -40 °C |
organize | 64MX4 |
Package body material | PLASTIC/EPOXY |
encapsulated code | TBGA |
Package shape | RECTANGULAR |
Package form | GRID ARRAY, THIN PROFILE |
Peak Reflow Temperature (Celsius) | 235 |
Certification status | Not Qualified |
Maximum seat height | 1.2 mm |
self refresh | YES |
Maximum supply voltage (Vsup) | 2.7 V |
Minimum supply voltage (Vsup) | 2.3 V |
Nominal supply voltage (Vsup) | 2.5 V |
surface mount | YES |
technology | CMOS |
Temperature level | INDUSTRIAL |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | BALL |
Terminal pitch | 1 mm |
Terminal location | BOTTOM |
Maximum time at peak reflow temperature | 30 |
width | 8 mm |
Base Number Matches | 1 |