MSA-2011, MSA-2086
Data Sheet
Silicon Bipolar RFIC Amplifiers
Description
The MSA-2011 and MSA-2086 are high performance sili-
con bipolar RFIC amplifiers designed to be cascadable in
50 Ω systems. The stability factor of K > 1 contributes to
easy cascading in numerous narrow and broadband IF
and RF commercial and industrial applications.
The MSA-2011 and -2086 are fabricated using a 10 GHz
f
T
, 25 GHz F
MAX
, silicon bipolar RFIC process which utilizes
nitride self-alignment, ion implantation, and gold met-
allization to achieve excellent uniformity, performance,
and reliability. The use of an external bias resistor for
temperature and current stability also allows bias flex-
ibility.
Package options include the industry standard plastic
surface mount SOT-143 package and the 85 mil surface
mountable plastic microstripline package.
Features
MSA-2011
•
Surface Mount SOT-143 Package
•
3 dB Bandwidth: DC to 1.0 GHz
•
16.2 dB Gain at 1 GHz
•
4.3 dB NF at 1 GHz
•
Lead-free Option Available
MSA-2086
•
Surface Mount Plastic Microstrip Package
•
3 dB Bandwidth: DC to 1.1 GHz
•
16.6 dB Gain at 1 GHz
•
3.7 dB NF at 1 GHz
•
Lead-free Option Available
MSA-2011
Pin Connections and Package Marking
A20x
MSA-2086
Notes:
Top View. Package Marking provides orientation and identification.
"x" is the date code.
MSA-2086
Absolute Maximum Ratings
[1]
Thermal
Resistance: θ
jc
Parameter
Device Current
Power Dissipation
[2,3]
RF Input Power
Junction
Temperature
Storage Temperature
MSA-2011
50 mA
250 mW
[3a]
+13 dBm
150°C
-65 to 150°C
500°C/W
MSA-2086
60 mA
325 mW
[3c]
+13 dBm
150°C
-65 to 150°C
115°C/W
Typical Biasing Configuration
R
bias
V
CC
7 V
DC BLOCK
INPUT
1
4
MSA
2
3
RF CHOKE
OUTPUT
V
d
= 5 V
R
bias
= V
CC
– V
d
I
d
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
CASE
= 25°C.
3a. Derate at 2.0 mW/°C for T
C
> 25°C.
b. Derate at 6.5 mW/°C for T
C
> 149°C.
c. Derate at 8.7 mW/°C for T
C
> 112°C.
Electrical Specifications, T
A
= 25°C
I
D
= 32 mA, Z
o
= 50 Ω
Symbol
G
P
∆G
P
f
3dB
VSWR
P
1dB
NF
IP
3
t
d
V
D
dV/dT
Parameters and
Test Conditions
Power Gain
(|S
21
|
2
)
f = 0.1 GHz
f = 0.5 GHz
f = 1.0 GHz
Gain Flatness
f = 0.1 to 0.6 GHz
3 dB Bandwidth
Input VSWR
f = 0.1 to 3.0 GHz
Output VSWR
f = 0.1 to 3.0 GHz
Power Output @
1 dB Gain
Compression:
f = 1.0 GHz
50 Ω Noise Figure
f = 1.0 GHz
Third Order
Intercept
Point
f = 1.0 GHz
Group Delay
f = 1.0 GHz
Device Voltage
T
C
= 25°C
Device Voltage
Temperature
Coefficient
MSA-2011
Units
dB
dB
GHz
Min.
15.0
Typ.
18.9
18.1
16.2
±0.6
1.0
1.3:1
1.4:1
Max.
Min.
15.0
MSA-2086
Typ.
19.2
18.3
16.6
±0.6
1.1
1.2:1
1.5:1
Max.
dBm
dB
9.0
4.3
9.0
3.7
dBm
psec
V
mV/°C
4.0
22
143
5.0
-9.3
6.0
4.5
22
143
5.0
-9.3
6.3
2
Typical Performance for MSA-2011
25
20
19
20
-55
°
C
-25
°
C
Gp (dB)
15
85
°
C
25
°
C
18
17
0.5 GHz
0.1 GHz
16
14
12
10
1.0 GHz
P
1dB
(dBm)
40 mA
35 mA
30 mA
GAIN (dB)
16
15
14
13
12
8
25 mA
6
4
10
2.0 GHz
20 mA
2
0
35
40
5
11
0.1
1.0
FREQUENCY (GHz)
4.0
20
25
30
I
d
(mA)
0.1
1.0
FREQUENCY (GHz)
4.0
Figure 1. Power Gain vs. Frequency at Four Tempera-
tures, I
D
= 32 mA.
Figure 2. Power Gain vs. Current at 25°C.
Figure 3. Typical P
1dB
vs. Frequency at 25°C.
6
GAIN (dB)
17
G
P
16
NOISE FIGURE (dB)
40
-55
°
C
-25
°
C
25
°
C
85
°
C
NOISE FIGURE (dB)
5
40 mA
P
1dB
(dBm)
15
6
5
NF
30
I
D
mA
20
20 mA
4
10
9
8
7
-25
P
1dB
4
3
10
3
0
25
AMBIENT TEMPERATURE (
°
C)
85
0.1
1.0
FREQUENCY (GHz)
4.0
0
1
2
3
6
4
5
V
D
(VOLTS)
Figure 4. Noise Figure vs. Frequency at I
D
= 32 mA.
Figure 5. Power Gain, Noise Figure, and P
1dB
vs. Tem-
perature at 1 GHz and I
D
= 32 mA.
Figure 6. I
D
vs. V
D
at Four Temperatures.
3
Typical Performance for MSA-2086
25
20
19
0.1 GHz
0.5 GHz
16
14
12
10
P
1dB
(dBm)
8
6
4
2
0
20
25
30
I
d
(mA)
35
40
40 mA
35 mA
30 mA
25 mA
20
GAIN (dB)
15
Gp (dB)
-55
°
C
25
°
C
85
°
C
125
°
C
18
17
16
15
14
13
12
1.0 GHz
10
2.0 GHz
20 mA
5
0
0.1
1.0
FREQUENCY (GHz)
4.0
11
0.1
1.0
FREQUENCY (GHz)
4.0
Figure 1. Power Gain vs. Frequency at Four Tempera-
tures, I
D
= 32 mA.
Figure 2. Power Gain vs. Current at 25°C.
Figure 3. Typical P
1dB
vs. Frequency at 25°C.
5
GAIN (dB)
17
16
15
G
P
40
-55
°
C
-25
°
C
25
°
C
85
°
C
NOISE FIGURE (dB)
I
D
mA
4
20 mA
10
NF
5
4
3
P
1dB
8
7
-25
NOISE FIGURE (dB)
4.5
6
30
20
40 mA
3.5
P
1dB
(dBm)
9
10
3
0
25
AMBIENT TEMPERATURE (
°
C)
85
0.1
1.0
FREQUENCY (GHz)
4.0
0
1
2
3
6
4
5
V
D
(VOLTS)
Figure 4. Noise Figure vs. Frequency at I
D
= 32 mA.
Figure 5. Power Gain, Noise Figure, and P
1dB
vs. Tem-
perature at 1 GHz and I
D
= 32 mA.
Figure 6. I
D
vs. V
D
at Four Temperatures.
5
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