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U1GWJ49(TE12L,F)

Description
DIODE SCHOTTKY 40V 1A PWMINI
Categorysemiconductor    Discrete semiconductor   
File Size214KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
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U1GWJ49(TE12L,F) Overview

DIODE SCHOTTKY 40V 1A PWMINI

U1GWJ49(TE12L,F) Parametric

Parameter NameAttribute value
Diode typeSchottky
Voltage - DC Reverse (Vr) (Maximum)40V
Current - average rectification (Io)1A
Voltage at different If - Forward (Vf550mV @ 1A
speedFast recovery = < 500 ns, > 200mA (Io)
Current at different Vr - Reverse leakage current500µA @ 40V
Capacitance at different Vr, F-
Installation typesurface mount
Package/casingTO-243AA
Supplier device packagingPW-MINI
Operating Temperature - Junction-40°C ~ 125°C
U1GWJ49
TOSHIBA SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE
U1GWJ49
HIGH SPEED RECTIFIER APPLICATIONS
Average Forward Current : I
F (AV)
= 1.0A
Low Forward Voltage
: V
FM
= 0.55V (Max)
Unit: mm
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C)
CHARACTERISTIC
Repetitive Peak Reverse Voltage
Average Forward Current
Peak One Cycle Surge Forward
Current (Non−Repetitive)
Junction Temparature
Storage Temparature Range
SYMBOL
V
RRM
I
F (AV)
I
FSM
T
j
T
stg
RATING
40
1.0
15 (50 Hz)
16.5 (60 Hz)
−40~125
−40~125
UNIT
V
A
A
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEDEC
temperature, etc.) may cause this product to decrease in the
JEITA
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
TOSHIBA
3-5E1A
maximum ratings.
Weight: 0.05 g (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
ELECTRICAL CHARACTERISTICS
(Ta = 25°C)
CHARACTERISTIC
Peak Forward Voltage
Repetitive Peak Reverse Current
Junction Capacitance
Thermal Resistance
SYMBOL
V
FM
I
RRM
C
j
R
th (j−a)
TEST CONDITION
I
FM
= 1.0A
V
RRM
= 40V
V
R
= 10V, f = 1MHz
Junction to Ambient
MIN
TYP.
50
MAX
0.55
0.5
125
UNIT
V
mA
pF
°C / W
MARKING
Part No. (or abbreviation code)
Abbreviation Code
SG
Part No.
U1GWJ49
S
Lot No.
G
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2006-11-13

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