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UNR51AEG0L

Description
TRANS PREBIAS PNP 150MW SMINI3
Categorysemiconductor    Discrete semiconductor   
File Size499KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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UNR51AEG0L Overview

TRANS PREBIAS PNP 150MW SMINI3

UNR51AEG0L Parametric

Parameter NameAttribute value
Transistor typePNP - Pre-biased
Current - Collector (Ic) (Maximum)80mA
Voltage - collector-emitter breakdown (maximum)50V
Resistor - Substrate (R1)47 kOhms
Resistor - Emitter Base (R2)22 kOhms
DC current gain (hFE) at different Ic, Vce (minimum value)60 @ 5mA,10V
Vce saturation value (maximum value) when different Ib,Ic250mV @ 300µA,10mA
Current - collector cutoff (maximum)500nA
Frequency - Transition80MHz
Power - Max150mW
Installation typesurface mount
Package/casingSC-85
Supplier device packagingS mini 3-F2
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors with built-in Resistor
UNR51AEG
Silicon PNP epitaxial planar type
For digital circuits
Features
Costs can be reduced through downsizing of the equipment and reduction of
the number of parts.
SMini type package allowing easy automatic insertion through tape packing
Package
Code
SMini3-F2
Name
Pin
1: Base
2: Emitter
3: Collector
Parameter
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
Collector-base voltage (Emitter open)
Collector current
Collector-emitter voltage (Base open)
Total power dissipation
Junction temperature
Storage temperature
T
stg
–55 to +150
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
tin
Forward current transfer ratio
Output voltage high-level
Output voltage low-level
Input resistance
Resistance ratio
Transition frequency
Note)
Ma
int
en
an
Emitter-base cutoff current (Collector open)
Collector-emitter saturation voltage
ce
Collector-emitter cutoff current (Base open)
isc
Collector-base cutoff current (Emitter open)
on
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
ue
V
CBO
di
Symbol
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Rating
–50
–50
–80
150
150
Unit
V
V
M
ain
Di
sc te
on na
tin nc
ue e/
d
Absolute Maximum Ratings
T
a
= 25°C
mA
°C
°C
mW
B
Marking Symbol: DL
Internal Connection
R
1
(47 kΩ)
C
E
R
2
(22 kΩ)
Conditions
Min
-50
-50
Typ
Max
Unit
V
V
mA
mA
mA
V
V
V
kW
MHz
I
C
=
-10 mA,
I
E
= 0
I
C
=
-2
mA, I
B
= 0
V
CB
=
-50
V, I
E
= 0
V
CE
=
-50
V, I
B
= 0
V
EB
=
-6
V, I
C
= 0
-
0.1
-
0.5
-
0.2
/D
V
CE
=
-10
V, I
C
=
-5
mA
60
V
CE(sat)
V
OH
V
OL
R
1
R
1
/ R
2
f
T
I
C
=
-10
mA, I
B
=
-
0.3 mA
-
0.25
-
0.2
2.6
V
CC
=
-5
V, V
B
=
-
0.5 V, R
L
= 1 kW
-4.9
Pl
V
CC
=
-5
V, V
B
=
-6
V, R
L
= 1 kW
-30%
1.7
V
CB
=
-10
V, I
E
= 1 mA, f = 200 MHz
47
2.14
80
+30%
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: August 2008
SJH00273AED
1

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Description TRANS PREBIAS PNP 150MW SMINI3 Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, SMINI3-F2, 3 PIN

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