NTE92 datasheet, PDF - EEWORLD Datasheet

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NTE92: DescriptionSilicon Complementary Transistors Hi-Fi Power Amp, Audio Ourtput; CategoryDiscrete semiconductor The transistor; File Size19KB，2 Pages; ManufacturerNTE; Websitehttp://www.nteinc.com; Environmental Compliance

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NTE92 Overview

Silicon Complementary Transistors Hi-Fi Power Amp, Audio Ourtput

NTE92 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	NTE
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	15 A
Collector-emitter maximum voltage	200 V
Configuration	SINGLE
Minimum DC current gain (hFE)	30
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power consumption environment	150 W
Maximum power dissipation(Abs)	150 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	20 MHz

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NTE92 (NPN) & NTE93 (PNP)

Silicon Complementary Transistors

Hi–Fi Power Amp, Audio Ourtput

Absolute Maximum Ratings:

= +25°C unless otherwise specified)

Collector–Base Voltage, V

CBO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V

Collector–Emitter Voltage, V

CEO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V

Emitter–Base Voltage, V

EBO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V

Collector Current, I

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A

Base Current, I

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A

Collector Power Dissipation (T

= +25°C), P

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W

Junction Temperature, T

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C

Storage Temperature Range, T

stg

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Note 1. Matched complementary pairs are available upon request (NTE93MCP). Matched comple-

mentary pairs have their gain specification (h

) matched to within 10% of each other.

Electrical Characteristics:

= +25°C unless otherwise specified)

Parameter

Collector Cutoff Current

Emitter Cutoff Current

Collector–Emitter Breakdown Voltage

DC Current Gain

Collector–Emitter Saturation Voltage

Transistion Frequency

Symbol

CBO

EBO

CE(sat)

Test Conditions

= 200V

= 6V

= 4V, I

= 5A

= 10A, I

= 1A

= 12V, I

= 0.5A

Min

–

200

–

Typ

–

120

Max

0.1

–

MHz

Unit

(BR)CEO

= 50mA

NTE92 Related Products

	NTE92	NTE93
Description	Silicon Complementary Transistors Hi-Fi Power Amp, Audio Ourtput	Silicon Complementary Transistors Hi-Fi Power Amp, Audio Ourtput
Is it Rohs certified?	conform to	conform to
Maker	NTE	NTE
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknow	unknow
ECCN code	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR
Maximum collector current (IC)	15 A	15 A
Collector-emitter maximum voltage	200 V	200 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	30	30
JESD-30 code	R-PSFM-T3	R-PSFM-T3
Number of components	1	1
Number of terminals	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	PNP
Maximum power consumption environment	150 W	150 W
Maximum power dissipation(Abs)	150 W	150 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	20 MHz	20 MHz

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