NTE273 datasheet, PDF - EEWORLD Datasheet

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NTE273: DescriptionPOWER TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size21KB，2 Pages; ManufacturerNTE; Websitehttp://www.nteinc.com

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NTE273 Overview

POWER TRANSISTOR

NTE273 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	NTE
Parts packaging code	SFM
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	HIGH RELIABILITY
Shell connection	COLLECTOR
Maximum collector current (IC)	2 A
Collector-emitter maximum voltage	40 V
Configuration	DARLINGTON
Minimum DC current gain (hFE)	4000
JEDEC-95 code	TO-202
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power consumption environment	10 W
Maximum power dissipation(Abs)	10 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON

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NTE272 (NPN) & NTE273 (PNP)

Silicon Darlington Complementary

Power Amplifiers

Description:

The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type

case designed for use in complementary amplifiers and driver applications.

Features:

High DC Current Gain:

= 25,000 (Min) @ I

= 200mA

= 15,000 (Min) @ I

= 500mA

Collector–Emitter Breakdown Voltage:

(BR)CES

= 40V @ I

= 500mA

Low Collector–Emitter Saturation Voltage:

CE(sat)

= 1.5V @ I

= 1A

Monolithic Construction for High Reliability

Absolute Maximum Ratings:

Collector–Emitter Voltage (Note 2), V

CEO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V

Collector–Emitter Voltage, V

CES

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V

Collector–Base Voltage, V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V

Emitter–Base Voltage, V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V

Collector Current, I

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A

Total Power Dissipation (T

= +25°C), P

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W

Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8mW/°C

Total Power Dissipation (T

= +25°C), P

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W

Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mW/°C

Operating Junction Temperature Range, T

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to +150°C

Storage Temperature Range, T

stg

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to +150°C

Thermal Resistance, Junction–to–Ambient, R

thJA

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125°C/W

Thermal Resistance, Junction–to–Case, R

thJC

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5°C/W

Note 1.

NTE273

is a

discontinued

device and

no longer

available.

Note 2. Due to the monolithic construction of this device, breakdown voltages of both transistor ele-

ments are identical. V

(BR)CES

is tested in lieu of V

(BR)CEO

in order to avoid errors caused

by noise pickup. The voltage measured during the V

(BR)CES

test is the V

(BR)CEO

of the output

transistor.

NTE273 Related Products

	NTE273	NTE272
Description	POWER TRANSISTOR	POWER TRANSISTOR
Is it Rohs certified?	incompatible	conform to
Maker	NTE	NTE
Parts packaging code	SFM	SFM
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Contacts	3	3
Reach Compliance Code	unknow	unknow
ECCN code	EAR99	EAR99
Other features	HIGH RELIABILITY	HIGH RELIABILITY
Shell connection	COLLECTOR	COLLECTOR
Maximum collector current (IC)	2 A	2 A
Collector-emitter maximum voltage	40 V	40 V
Configuration	DARLINGTON	DARLINGTON
Minimum DC current gain (hFE)	4000	4000
JEDEC-95 code	TO-202	TO-202
JESD-30 code	R-PSFM-T3	R-PSFM-T3
Number of components	1	1
Number of terminals	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	PNP	NPN
Maximum power consumption environment	10 W	10 W
Maximum power dissipation(Abs)	10 W	10 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON

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