PD - 93935B
SMPS MOSFET
Applications
l
IRFR3708
IRFU3708
HEXFET
®
Power MOSFET
High Frequency DC-DC Isolated Converters
with Synchronous Rectification for Telecom
and Industrial Use
High Frequency Buck Converters for
Computer Processor Power
V
DSS
30V
R
DS(on)
max
12.5mΩ
I
D
61A
l
Benefits
l
l
l
Ultra-Low Gate Impedance
Very Low R
DS(on)
at 4.5V V
GS
Fully Characterized Avalanche Voltage
and Current
D-Pak
IRFR3708
I-Pak
IRFU3708
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
, T
STG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
Max.
30
± 12
61
51
244
87
61
0.58
-55 to + 175
Units
V
V
A
W
W
W/°C
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
1.73
50
110
Units
°C/W
* When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
Notes
through
are on page 9
www.irf.com
1
8/22/00
IRFR/U3708
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Min.
30
–––
–––
Static Drain-to-Source On-Resistance –––
–––
Gate Threshold Voltage
0.6
–––
Drain-to-Source Leakage Current
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Typ.
–––
0.028
8.5
10.0
15.0
–––
–––
–––
–––
–––
Max. Units
––– V
––– V/°C
12.5
14.0 mΩ
30.0
2.0
V
20
µA
100
200
nA
-200
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 15A
V
GS
= 4.5V, I
D
= 12A
V
GS
= 2.8V, I
D
= 7.5A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 12V
V
GS
= -12V
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
g
fs
Q
g
Q
gs
Q
gd
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
49
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
24
6.7
5.8
14
7.2
50
17.6
3.7
2417
707
52
Max. Units
Conditions
–––
S
V
DS
= 15V, I
D
= 50A
–––
I
D
= 24.8A
–––
nC V
DS
= 15V
–––
V
GS
= 4.5V
21
V
GS
= 0V, I
D
= 24.8A, V
DS
= 15V
–––
V
DD
= 15V
–––
I
D
= 24.8A
ns
–––
R
G
= 0.6Ω
–––
V
GS
= 4.5V
–––
V
GS
= 0V
–––
V
DS
= 15V
–––
pF
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
E
AS
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
213
62
Units
mJ
A
Diode Characteristics
Symbol
I
S
I
SM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse
Reverse
Reverse
Reverse
Recovery
Recovery
Recovery
Recovery
Time
Charge
Time
Charge
Min. Typ. Max. Units
–––
–––
–––
–––
61
244
1.3
–––
62
96
65
105
V
ns
nC
ns
nC
A
V
SD
t
rr
Q
rr
t
rr
Q
rr
––– 0.88
––– 0.80
––– 41
––– 64
––– 43
––– 70
Conditions
D
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
S
T
J
= 25°C, I
S
= 31A, V
GS
= 0V
T
J
= 125°C, I
S
= 31A, V
GS
= 0V
T
J
= 25°C, I
F
= 31A, V
R
=20V
di/dt = 100A/µs
T
J
= 125°C, I
F
= 31A, V
R
=20V
di/dt = 100A/µs
2
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IRFR/U3708
1000
VGS
TOP
10.0V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
BOTTOM 2.7V
1000
VGS
10.0V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
BOTTOM 2.7V
TOP
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
100
2.7V
2.7V
10
10
20µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
1
0.1
1
20µs PULSE WIDTH
Tj = 175°C
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.5
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 61A
I
D
, Drain-to-Source Current (A)
2.0
T
J
= 25
°
C
T
J
= 175
°
C
1.5
100
1.0
0.5
10
2.0
V DS = 15V
20µs PULSE WIDTH
5.0
3.0
4.0
6.0
0.0
-60 -40 -20 0
V
GS
= 10V
20 40 60 80 100 120 140 160 180
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRFR/U3708
3500
2800
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
10
I
D
=
24.8A
V
DS
= 15V
8
C, Capacitance (pF)
Ciss
2100
6
1400
C
oss
4
700
2
0
1
C
rss
10
100
0
0
10
20
30
40
50
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
T
J
= 25
°
C
I
D
, Drain Current (A)
100
T
J
= 175
°
C
10us
100
100us
10
1ms
1
0.1
0.2
V
GS
= 0 V
0.8
1.4
2.0
2.6
1
0.1
T
C
= 25 ° C
T
J
= 175 ° C
Single Pulse
1
10
10ms
100
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRFR/U3708
70
V
DS
R
D
LIMITED BY PACKAGE
60
V
GS
R
G
D.U.T.
+
I
D
, Drain Current (A)
50
-
V
DD
10V
40
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
30
Fig 10a.
Switching Time Test Circuit
20
V
DS
10
90%
0
25
50
75
100
125
150
175
T
C
, Case Temperature ( ° C)
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10b.
Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
0.0001
0.001
0.01
1
P
DM
t
1
t
2
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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