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IRFR3708TR

Description
MOSFET N-CH 30V 61A DPAK
Categorysemiconductor    Discrete semiconductor   
File Size131KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

IRFR3708TR Overview

MOSFET N-CH 30V 61A DPAK

IRFR3708TR Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)30V
Current - Continuous Drain (Id) at 25°C61A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)2.8V,10V
Rds On (maximum value) when different Id, Vgs12.5 milliohms @ 15A, 10V
Vgs (th) (maximum value) when different Id2V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)24nC @ 4.5V
Vgs (maximum value)±12V
Input capacitance (Ciss) at different Vds (maximum value)2417pF @ 15V
FET function-
Power dissipation (maximum)87W(Tc)
Operating temperature-55°C ~ 175°C(TJ)
Installation typesurface mount
Supplier device packagingD-Pak
Package/casingTO-252-3, DPak (2 leads + tab), SC-63
PD - 93935B
SMPS MOSFET
Applications
l
IRFR3708
IRFU3708
HEXFET
®
Power MOSFET
High Frequency DC-DC Isolated Converters
with Synchronous Rectification for Telecom
and Industrial Use
High Frequency Buck Converters for
Computer Processor Power
V
DSS
30V
R
DS(on)
max
12.5mΩ
I
D
61A
„
l
Benefits
l
l
l
Ultra-Low Gate Impedance
Very Low R
DS(on)
at 4.5V V
GS
Fully Characterized Avalanche Voltage
and Current
D-Pak
IRFR3708
I-Pak
IRFU3708
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
, T
STG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current

Maximum Power Dissipation
ƒ
Maximum Power Dissipation
ƒ
Linear Derating Factor
Junction and Storage Temperature Range
Max.
30
± 12
61
„
51
„
244
87
61
0.58
-55 to + 175
Units
V
V
A
W
W
W/°C
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
1.73
50
110
Units
°C/W
* When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
Notes

through
„
are on page 9
www.irf.com
1
8/22/00

IRFR3708TR Related Products

IRFR3708TR IRFU3708 IRFR3708 IRFR3708TRL IRFR3708TRR
Description MOSFET N-CH 30V 61A DPAK MOSFET N-CH 30V 61A I-PAK MOSFET N-CH 30V 61A DPAK MOSFET N-CH 30V 61A DPAK MOSFET N-CH 30V 61A DPAK
FET type N channel N channel - N channel N channel
technology MOSFET (metal oxide) MOSFET (metal oxide) - MOSFET (metal oxide) MOSFET (metal oxide)
Drain-source voltage (Vdss) 30V 30V - 30V 30V
Current - Continuous Drain (Id) at 25°C 61A(Tc) 61A(Tc) - 61A(Tc) 61A(Tc)
Drive voltage (maximum Rds On, minimum Rds On) 2.8V,10V 2.8V,10V - 2.8V,10V 2.8V,10V
Rds On (maximum value) when different Id, Vgs 12.5 milliohms @ 15A, 10V 12.5 milliohms @ 15A, 10V - 12.5 milliohms @ 15A, 10V 12.5 milliohms @ 15A, 10V
Vgs (th) (maximum value) when different Id 2V @ 250µA 2V @ 250µA - 2V @ 250µA 2V @ 250µA
Gate charge (Qg) at different Vgs (maximum value) 24nC @ 4.5V 24nC @ 4.5V - 24nC @ 4.5V 24nC @ 4.5V
Vgs (maximum value) ±12V ±12V - ±12V ±12V
Input capacitance (Ciss) at different Vds (maximum value) 2417pF @ 15V 2417pF @ 15V - 2417pF @ 15V 2417pF @ 15V
Power dissipation (maximum) 87W(Tc) 87W(Tc) - 87W(Tc) 87W(Tc)
Operating temperature -55°C ~ 175°C(TJ) -55°C ~ 175°C(TJ) - -55°C ~ 175°C(TJ) -55°C ~ 175°C(TJ)
Installation type surface mount Through hole - surface mount surface mount
Supplier device packaging D-Pak IPAK(TO-251) - D-Pak D-Pak
Package/casing TO-252-3, DPak (2 leads + tab), SC-63 TO-251-3 short lead, IPak, TO-251AA - TO-252-3, DPak (2 leads + tab), SC-63 TO-252-3, DPak (2 leads + tab), SC-63
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