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BF391L

Description
500mA, 200V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, TO-92 COMPATIBLE, E-LINE PACKAGE-3
CategoryThe transistor   
File Size99KB,4 Pages
ManufacturerDiodes Incorporated
Download Datasheet Parametric Compare View All

BF391L Overview

500mA, 200V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, TO-92 COMPATIBLE, E-LINE PACKAGE-3

BF391L Parametric

Parameter NameAttribute value
MakerDiodes Incorporated
package instructionIN-LINE, R-PSIP-W3
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Maximum collector current (IC)0.5 A
Collector-based maximum capacity1.6 pF
Collector-emitter maximum voltage200 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JESD-30 codeR-PSIP-W3
Number of components1
Number of terminals3
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeNPN
Maximum power consumption environment1.5 W
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationSINGLE
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz
VCEsat-Max2 V
Base Number Matches1

BF391L Related Products

BF391L BF391K BF391STZ BF391Q BF391M1
Description 500mA, 200V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, TO-92 COMPATIBLE, E-LINE PACKAGE-3 500mA, 200V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, TO-92 COMPATIBLE, E-LINE PACKAGE-3 500mA, 200V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, TO-92 COMPATIBLE, E-LINE PACKAGE-3 500mA, 200V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, TO-92 COMPATIBLE, E-LINE PACKAGE-3 500mA, 200V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, TO-92 COMPATIBLE, E-LINE PACKAGE-3
Maker Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
package instruction IN-LINE, R-PSIP-W3 IN-LINE, R-PSIP-W3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-W3 SMALL OUTLINE, R-PSSO-G3
Reach Compliance Code unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Is Samacsys N N N N N
Maximum collector current (IC) 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A
Collector-based maximum capacity 1.6 pF 1.6 pF 1.6 pF 1.6 pF 1.6 pF
Collector-emitter maximum voltage 200 V 200 V 200 V 200 V 200 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 40 40 40 40 40
JESD-30 code R-PSIP-W3 R-PSIP-W3 R-PSIP-T3 R-PSIP-W3 R-PSSO-G3
Number of components 1 1 1 1 1
Number of terminals 3 3 3 3 3
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE IN-LINE SMALL OUTLINE
Polarity/channel type NPN NPN NPN NPN NPN
Maximum power consumption environment 1.5 W 1.5 W 1.5 W 1.5 W 1.5 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO YES
Terminal form WIRE WIRE THROUGH-HOLE WIRE GULL WING
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE
Transistor component materials SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 50 MHz 50 MHz 50 MHz 50 MHz 50 MHz
VCEsat-Max 2 V 2 V 2 V 2 V 2 V
Base Number Matches 1 1 1 1 1

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