BF391M1 datasheet, PDF - EEWORLD Datasheet

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BF391M1: Description500mA, 200V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, TO-92 COMPATIBLE, E-LINE PACKAGE-3; CategoryThe transistor; File Size99KB，4 Pages; ManufacturerDiodes Incorporated

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BF391M1 Overview

500mA, 200V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, TO-92 COMPATIBLE, E-LINE PACKAGE-3

BF391M1 Parametric

Parameter Name	Attribute value
Maker	Diodes Incorporated
package instruction	SMALL OUTLINE, R-PSSO-G3
Reach Compliance Code	unknown
ECCN code	EAR99
Is Samacsys	N
Maximum collector current (IC)	0.5 A
Collector-based maximum capacity	1.6 pF
Collector-emitter maximum voltage	200 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JESD-30 code	R-PSSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power consumption environment	1.5 W
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
Transistor component materials	SILICON
Nominal transition frequency (fT)	50 MHz
VCEsat-Max	2 V
Base Number Matches	1

BF391M1 Related Products

	BF391M1	BF391K	BF391L	BF391STZ	BF391Q
Description	500mA, 200V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, TO-92 COMPATIBLE, E-LINE PACKAGE-3	500mA, 200V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, TO-92 COMPATIBLE, E-LINE PACKAGE-3	500mA, 200V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, TO-92 COMPATIBLE, E-LINE PACKAGE-3	500mA, 200V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, TO-92 COMPATIBLE, E-LINE PACKAGE-3	500mA, 200V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, TO-92 COMPATIBLE, E-LINE PACKAGE-3
Maker	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated
package instruction	SMALL OUTLINE, R-PSSO-G3	IN-LINE, R-PSIP-W3	IN-LINE, R-PSIP-W3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-W3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Is Samacsys	N	N	N	N	N
Maximum collector current (IC)	0.5 A	0.5 A	0.5 A	0.5 A	0.5 A
Collector-based maximum capacity	1.6 pF	1.6 pF	1.6 pF	1.6 pF	1.6 pF
Collector-emitter maximum voltage	200 V	200 V	200 V	200 V	200 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	40	40	40	40	40
JESD-30 code	R-PSSO-G3	R-PSIP-W3	R-PSIP-W3	R-PSIP-T3	R-PSIP-W3
Number of components	1	1	1	1	1
Number of terminals	3	3	3	3	3
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C	175 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE
Polarity/channel type	NPN	NPN	NPN	NPN	NPN
Maximum power consumption environment	1.5 W	1.5 W	1.5 W	1.5 W	1.5 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	NO	NO	NO	NO
Terminal form	GULL WING	WIRE	WIRE	THROUGH-HOLE	WIRE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	50 MHz	50 MHz	50 MHz	50 MHz	50 MHz
VCEsat-Max	2 V	2 V	2 V	2 V	2 V
Base Number Matches	1	1	1	1	1

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