1.5SMC6.8(A) - 1.5SMC200(A)
Taiwan Semiconductor
1500W, 6.8V - 200V Surface Mount Transient Voltage Suppressor
FEATURES
●
●
●
●
●
●
●
Low profile package
Ideal for automated placement
Glass passivated junction
Excellent clamping capability
Fast response time: Typically less than 1.0ps
Typical I
R
less than 1μA above 10V
Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
V
WM
V
BR
P
PK
T
J MAX
Package
Configuration
VALUE
5.5 - 171
6.8 - 200
1500
150
UNIT
V
V
W
°C
DO-214AB (SMC)
Single die
APPLICATIONS
● Immunization of sensitive devices in automotive,
telecommunications, consumer electronics, and industrial
equipment from electrostatic discharge (ESD) and transient
voltages induced by load switching and lightning
MECHANICAL DATA
●
●
●
●
●
●
●
●
●
Case：DO-214AB (SMC)
Molding compound meets UL 94V-0 flammability rating
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound
(halogen-free)
Moisture sensitivity level: level 1, per J-STD-020
Terminal：Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 2 whisker test
Polarity：As marked
Weight： 0.21 g (approximately)
DO-214AB (SMC)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Peak power dissipation at T
A
=25°C, Tp=1ms
(1)
SYMBOL
P
PK
P
D
I
FSM
V
F
T
J
VALUE
1500
6.5
200
3.5 /5.0
-55 to +150
-55 to +150
UNIT
W
W
A
V
°C
°C
Steady state power dissipation at T
A
=25°C
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
(2)
Forward Voltage @ I
F
=50A for Unidirectional only
Junction temperature
Storage temperature
T
STG
Notes:
1. Non-repetitive current pulse per Fig. 3 and derated above T
A
=25°C per Fig. 2
2. V
F
=3.5V on 1.5SMC6.8 - 1.5SMC91 and V
F
=5.0V on 1.5SMC100 - 1.5SMC200
Devices for Bipolar Applications
1. For bidirectional use C or CA suffix for types 1.5SMC6.8 - types 1.5SMC200A
2. Electrical characteristics apply in both directions
1
Version:O1708
1.5SMC6.8(A) - 1.5SMC200(A)
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
Breakdown
voltage
(Note 1)
V
BR
@I
T
(V)
MIN.
48.5
50.4
53.2
55.8
58.9
61.2
64.6
67.5
71.3
73.8
77.9
81.9
86.5
90
95
99
105
108
114
117
124
135
143
144
152
153
162
162
171
180
190
MAX.
53.6
61.6
58.8
68.2
65.1
74.8
71.4
82.5
78.8
90.2
86.1
100
95.5
110
105
121
116
132
126
143
137
165
158
176
168
187
179
198
189
220
210
Maximum
Working
Test
blocking
stand-off
current
leakage
voltage
current
I
T
V
WM
(mA)
I
R
@V
WM
(V)
(µA)
Maximu
m peak
impulse
current
(Note 2)
I
PPM
(A)
22
19
20
17
18
16
17
14
15
13
13.9
12
12.6
10.9
11.4
9.9
10.3
9.1
9.5
8.4
8.7
7.3
7.6
6.8
7.1
6.4
6.7
6.1
6.4
5.4
5.7
Maximum
Maximum
clamping
Temperature
voltage
Coefficient
V
C
@I
PPM
of
V
BR
(%/°C)
(V)
70.1
80.5
77.0
89.0
85.0
98.0
92.0
108
103
118
113
131
125
144
137
158
152
173
165
187
179
215
207
230
219
244
234
258
246
287
274
0.102
0.103
0.103
0.104
0.104
0.104
0.104
0.105
0.105
0.105
0.105
0.106
0.106
0.106
0.106
0.107
0.107
0.107
0.107
0.107
0.107
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
Part number
Marking
code
1.5SMC51A
FGJ
1.0
43.6
1
1.5SMC56
FHJ
1.0
45.4
1
1.5SMC56A
FKJ
1.0
47.8
1
1.5SMC62
FLJ
1.0
50.2
1
1.5SMC62A
FMJ
1.0
53.0
1
1.5SMC68
FNJ
1.0
55.1
1
1.5SMC68A
FPJ
1.0
58.1
1
1.5SMC75
FQJ
1.0
60.7
1
1.5SMC75A
FRJ
1.0
64.1
1
1.5SMC82
FSJ
1.0
66.4
1
1.5SMC82A
FTJ
1.0
70.1
1
1.5SMC91
FUJ
1.0
73.7
1
1.5SMC91A
FVJ
1.0
77.8
1
1.5SMC100
FWJ
1.0
81.0
1
1.5SMC100A
FXJ
1.0
85.5
1
1.5SMC110
FYJ
1.0
89.2
1
1.5SMC110A
FZJ
1.0
94.0
1
1.5SMC120
GDJ
1.0
97.2
1
1.5SMC120A
GEJ
1.0
102.0
1
1.5SMC130
GFJ
1.0
105.0
1
1.5SMC130A
GGJ
1.0
111.0
1
1.5SMC150
GHJ
1.0
121.0
1
1.5SMC150A
GKJ
1.0
128.0
1
1.5SMC160
GLJ
1.0
130.0
1
1.5SMC160A
GMJ
1.0
136.0
1
1.5SMC170
GNJ
1.0
138.0
1
1.5SMC170A
GPJ
1.0
145.0
1
1.5SMC180
GQJ
1.0
146.0
1
1.5SMC180A
GRJ
1.0
154.0
1
1.5SMC200
GSJ
1.0
162.0
1
1.5SMC200A
GTJ
1.0
171.0
1
Notes:
1. V
BR
measure after I
T
applied for 300μs, I
T
=square wave pulse or equivalent
2. Surge current waveform per Fig. 3 and derate per Fig. 2
3. For bipolar types having V
WM
of 10 volts and under, the I
R
limit is doubled
4. For bidirectional use C or CA suffix for types 1.5SMC6.8 - 1.5SMC200A
5. All terms and symbols are consistent with ANSI/IEEE C62.35
3
Version:O1708
1.5SMC6.8(A) - 1.5SMC200(A)
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 Peak Pulse Power Rating Curve
PEAK PULSE POWER (P
PPM
) OR CURRENT(I
PP
)
DERATING IN PERCENTAGE (%)
100
NON-REPETITIVE
PULSE
WAVEFORM
SHOWN in FIG.3
10
125
Fig.2 Pulse Derating Curve
P
PPM
, PEAK PULSE POWER (KW)
100
75
50
1
25
0.1
0.1
1
10
100
tp, PULSE WIDTH, (μs)
1000
10000
0
0
25
50
75
100
125
150
175
200
T
A
, AMBIENT TEMPERATURE (
°
C)
Fig.3 Clamping Power Pulse Waveform
10000
140
120
100
Rise time tr=10μs to 100% of I
PPM
80
60
40
20
0
0
0.5
1
1.5
t, TIME (ms)
2
2.5
3
td
Half value-I
PPM
/2
10/1000μs, waveform
as defined by R.E.A.
Peak value
I
PPM
CJ, JUNCTION CAPACITANCE (pF)
A
Pulse width(td) is defined
as the point where the peak
current decays to 50% of I
PPM
Fig.4 Typical Junction Capacitance
UNIDIRECTIONAL
BIDRECTIONA
V
R
=0
1000
100
V
R
-RATED
STAND-OFF
VOLTAGE
10
1
f=1.0MHz
Vsig=50mVp-p
10
V(
BR
), BREAKDOWN VOLTAGE (V)
100
5
Version:O1708
ST - Low Power RF
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