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CSHD6-60C TR13

Description
DIODE SCHOTTKY 60V 6A DPAK
Categorysemiconductor    Discrete semiconductor   
File Size557KB,4 Pages
ManufacturerCentral Semiconductor
Environmental Compliance
Download Datasheet Parametric View All

CSHD6-60C TR13 Overview

DIODE SCHOTTKY 60V 6A DPAK

CSHD6-60C TR13 Parametric

Parameter NameAttribute value
Diode configuration1 pair of common cathodes
Diode typeSchottky
Voltage - DC Reverse (Vr) (Maximum)60V
Current - average rectification (Io) (per diode)6A
Voltage at different If - Forward (Vf900mV @ 6A
speedFast recovery = < 500 ns, > 200mA (Io)
Current at different Vr - Reverse leakage current30µA @ 60V
Operating Temperature - Junction-65°C ~ 150°C
Installation typesurface mount
Package/casingTO-252-3, DPak (2 leads + tab), SC-63
Supplier device packagingDPAK
CSHD6-60C
SURFACE MOUNT SILICON
DUAL, COMMON CATHODE
SCHOTTKY RECTIFIER
6.0 AMP, 60 VOLT
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CSHD6-60C is a
silicon Schottky rectifier designed for fast switching
applications requiring a low forward voltage drop.
MARKING: FULL PART NUMBER
DPAK CASE
MAXIMUM RATINGS:
(TC=25°C unless otherwise noted)
SYMBOL
Peak Repetitive Reverse Voltage
VRRM
Average Rectified Forward Current (TC=120°C)
IO
Peak Forward Surge Current, tp=10ms
Peak Repetitive Reverse Surge Current, tp=2.0μs
Critical Rate of Rise of Reverse Voltage
Operating and Storage Junction Temperature
Thermal Resistance Per Diode
ELECTRICAL
SYMBOL
IR
IR
VF
VF
VF
VF
CJ
IFSM
IRRM
dv/dt
TJ, Tstg
Θ
JC
60
6.0
50
1.0
10,000
-65 to +150
3.5
UNITS
V
A
A
A
V/μs
°C
°C/W
CHARACTERISTICS PER DIODE:
(TC=25°C unless otherwise noted)
TEST CONDITIONS
TYP
MAX
VR=60V
7.0
30
VR=60V, TC=125°C
IF=3.0A
IF=3.0A, TC=125°C
IF=6.0A
IF=6.0A, TC=125°C
VR=0, f=1.0MHz
7.0
0.61
0.55
0.80
0.66
377
10
0.70
0.65
0.90
0.85
UNITS
μA
mA
V
V
V
V
pF
R10 (1-March 2016)

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