TSM3457CX6 RFG datasheet, PDF - EEWORLD Datasheet

TSM3457CX6 RFG: DescriptionMOSFET P-CHANNEL 30V 5A SOT26; Categorysemiconductor Discrete semiconductor; File Size206KB，6 Pages; ManufacturerTaiwan Semiconductor; Websitehttp://www.taiwansemi.com/; Environmental Compliance

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TSM3457CX6 RFG Overview

MOSFET P-CHANNEL 30V 5A SOT26

Parameter Name	Attribute value
FET type	P channel
technology	MOSFET (metal oxide)
Drain-source voltage (Vdss)	30V
Current - Continuous Drain (Id) at 25°C	5A（Ta）
Drive voltage (maximum Rds On, minimum Rds On)	4.5V，10V
Rds On (maximum value) when different Id, Vgs	60 milliohms @ 5A, 10V
Vgs (th) (maximum value) when different Id	3V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)	27nC @ 10V
Vgs (maximum value)	±20V
Input capacitance (Ciss) at different Vds (maximum value)	551.57pF @ 15V
FET function	-
Power dissipation (maximum)	2W（Ta）
Operating temperature	-55°C ~ 150°C（TJ）
Installation type	surface mount
Supplier device packaging	SOT-26
Package/casing	SOT-23-6

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