PMBFJ310,215 datasheet, PDF - EEWORLD Datasheet

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PMBFJ310,215: DescriptionJFET N-CH 25V 250MW SOT23; CategoryDiscrete semiconductor The transistor; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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PMBFJ310,215 Overview

JFET N-CH 25V 250MW SOT23

PMBFJ310,215 Parametric

Parameter Name	Attribute value
Brand Name	NXP Semiconductor
Is it Rohs certified?	conform to
Maker	NXP
Parts packaging code	TO-236
package instruction	PLASTIC PACKAGE-3
Contacts	3
Manufacturer packaging code	SOT23
Reach Compliance Code	compliant
Other features	LOW NOISE
Configuration	SINGLE
Minimum drain-source breakdown voltage	25 V
FET technology	JUNCTION
Maximum feedback capacitance (Crss)	2.5 pF
highest frequency band	VERY HIGH FREQUENCY BAND
JEDEC-95 code	TO-236AB
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Operating mode	DEPLETION MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.25 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	AMPLIFIER
Transistor component materials	SILICON

PMBFJ310,215 Related Products

	PMBFJ310,215	PMBFJ308,215	PMBFJ309,215	PMBFJ309T/R	PMBFJ310T/R	PMBFJ309-T	PMBFJ308-T	PMBFJ310-T	PMBFJ308T/R
Description	JFET N-CH 25V 250MW SOT23	JFET N-CH 25V 250MW SOT23	JFET N-CH 25V 250MW SOT23	TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET RF Small Signal	TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET RF Small Signal	TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET RF Small Signal	TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET RF Small Signal	TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET RF Small Signal	TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET RF Small Signal
Maker	NXP	NXP	NXP	NXP	NXP	NXP	NXP	NXP	NXP
Parts packaging code	TO-236	TO-236	TO-236	SOT-23	SOT-23	SOT-23	SOT-23	SOT-23	SOT-23
package instruction	PLASTIC PACKAGE-3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	PLASTIC PACKAGE-3	PLASTIC PACKAGE-3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	PLASTIC PACKAGE-3
Contacts	3	3	3	3	3	3	3	3	3
Reach Compliance Code	compliant	compliant	compliant	unknown	unknown	unknown	unknown	unknown	unknow
Other features	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum drain-source breakdown voltage	25 V	25 V	25 V	25 V	25 V	25 V	25 V	25 V	25 V
FET technology	JUNCTION	JUNCTION	JUNCTION	JUNCTION	JUNCTION	JUNCTION	JUNCTION	JUNCTION	JUNCTION
Maximum feedback capacitance (Crss)	2.5 pF	2.5 pF	2.5 pF	2.5 pF	2.5 pF	2.5 pF	2.5 pF	2.5 pF	2.5 pF
highest frequency band	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND
JEDEC-95 code	TO-236AB	TO-236AB	TO-236AB	TO-236AB	TO-236AB	TO-236AB	TO-236AB	TO-236AB	TO-236AB
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	1	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3	3	3
Operating mode	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	-	-	-	conform to
JESD-609 code	e3	e3	e3	e3	e3	-	-	-	e3
Peak Reflow Temperature (Celsius)	260	260	260	260	260	-	-	-	260
Maximum power dissipation(Abs)	0.25 W	0.25 W	0.25 W	0.25 W	0.25 W	-	-	-	0.25 W
Terminal surface	Tin (Sn)	Tin (Sn)	Tin (Sn)	TIN	Matte Tin (Sn)	-	-	-	TIN
Maximum time at peak reflow temperature	40	NOT SPECIFIED	NOT SPECIFIED	40	40	-	-	-	40

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