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BUK98150-55A,135

Description
MOSFET N-CH 55V 5.5A SOT-223
CategoryDiscrete semiconductor    The transistor   
File Size743KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BUK98150-55A,135 Overview

MOSFET N-CH 55V 5.5A SOT-223

BUK98150-55A,135 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconductor
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSC-73
package instructionPLASTIC, SC-73, 4 PIN
Contacts4
Manufacturer packaging codeSOT223
Reach Compliance Codecompliant
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)22 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage55 V
Maximum drain current (Abs) (ID)5 A
Maximum drain current (ID)5.5 A
Maximum drain-source on-resistance0.161 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)6 W
Maximum pulsed drain current (IDM)22 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
BUK98150-55A
19 March 2014
N-channel TrenchMOS logic level FET
Product data sheet
1. General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
2. Features and benefits
Low conduction losses due to low on-state resistance
Q101 compliant
Suitable for logic level gate drive sources
3. Applications
12 V and 24 V loads
Automotive and general purpose power switching
Motors, lamps and solenoids
4. Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
T
j
≥ 25 °C; T
j
≤ 150 °C
V
GS
= 5 V; T
sp
= 25 °C;
Fig. 2; Fig. 3
T
sp
= 25 °C;
Fig. 1
V
GS
= 4.5 V; I
D
= 5 A; T
j
= 25 °C
V
GS
= 10 V; I
D
= 5 A; T
j
= 25 °C
V
GS
= 5 V; I
D
= 5 A; T
j
= 25 °C;
Fig. 12;
Fig. 13
Dynamic characteristics
Q
GD
gate-drain charge
V
GS
= 5 V; I
D
= 5 A; V
DS
= 44 V;
T
j
= 25 °C;
Fig. 14
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-
source avalanche
energy
I
D
= 5.5 A; V
sup
≤ 55 V; R
GS
= 50 Ω;
V
GS
= 5 V; T
j(init)
= 25 °C; unclamped
-
-
22
mJ
-
2.8
-
nC
Min
-
-
-
Typ
-
-
-
Max
55
5.5
8
Unit
V
A
W
Static characteristics
drain-source on-state
resistance
-
-
-
-
116
128
161
137
150

BUK98150-55A,135 Related Products

BUK98150-55A,135
Description MOSFET N-CH 55V 5.5A SOT-223
Brand Name NXP Semiconductor
Is it Rohs certified? conform to
Maker NXP
Parts packaging code SC-73
package instruction PLASTIC, SC-73, 4 PIN
Contacts 4
Manufacturer packaging code SOT223
Reach Compliance Code compliant
ECCN code EAR99
Avalanche Energy Efficiency Rating (Eas) 22 mJ
Shell connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 55 V
Maximum drain current (Abs) (ID) 5 A
Maximum drain current (ID) 5.5 A
Maximum drain-source on-resistance 0.161 Ω
FET technology METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDSO-G4
JESD-609 code e3
Humidity sensitivity level 1
Number of components 1
Number of terminals 4
Operating mode ENHANCEMENT MODE
Maximum operating temperature 150 °C
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED
Polarity/channel type N-CHANNEL
Maximum power dissipation(Abs) 6 W
Maximum pulsed drain current (IDM) 22 A
Certification status Not Qualified
surface mount YES
Terminal surface Tin (Sn)
Terminal form GULL WING
Terminal location DUAL
Maximum time at peak reflow temperature NOT SPECIFIED
transistor applications SWITCHING
Transistor component materials SILICON
Base Number Matches 1
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