|
VS-20ETS08STRL-M3 |
VS-20ETS12STRR-M3 |
Description |
DIODE GEN PURP 800V 20A TO263AB |
DIODE GEN PURP 1.2KV 20A TO263AB |
Is it Rohs certified? |
conform to |
conform to |
package instruction |
D2PAK-3/2 |
D2PAK-3/2 |
Reach Compliance Code |
compliant |
compliant |
ECCN code |
EAR99 |
EAR99 |
Factory Lead Time |
16 weeks |
16 weeks |
application |
HIGH VOLTAGE |
HIGH VOLTAGE |
Shell connection |
CATHODE |
CATHODE |
Configuration |
SINGLE |
SINGLE |
Diode component materials |
SILICON |
SILICON |
Diode type |
RECTIFIER DIODE |
RECTIFIER DIODE |
Maximum forward voltage (VF) |
1.1 V |
1.1 V |
JEDEC-95 code |
TO-263AB |
TO-263AB |
JESD-30 code |
R-PSSO-G2 |
R-PSSO-G2 |
JESD-609 code |
e3 |
e3 |
Humidity sensitivity level |
1 |
1 |
Maximum non-repetitive peak forward current |
300 A |
300 A |
Number of components |
1 |
1 |
Phase |
1 |
1 |
Number of terminals |
2 |
2 |
Maximum operating temperature |
150 °C |
150 °C |
Minimum operating temperature |
-40 °C |
-40 °C |
Maximum output current |
20 A |
20 A |
Package body material |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
Package shape |
RECTANGULAR |
RECTANGULAR |
Package form |
SMALL OUTLINE |
SMALL OUTLINE |
Peak Reflow Temperature (Celsius) |
245 |
245 |
Maximum repetitive peak reverse voltage |
800 V |
1200 V |
Maximum reverse current |
100 µA |
100 µA |
surface mount |
YES |
YES |
Terminal surface |
Matte Tin (Sn) |
Matte Tin (Sn) |
Terminal form |
GULL WING |
GULL WING |
Terminal location |
SINGLE |
SINGLE |
Maximum time at peak reflow temperature |
30 |
30 |
Base Number Matches |
1 |
1 |