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BC546-AP

Description
TRANS NPN 65V 0.1A TO-92
Categorysemiconductor    Discrete semiconductor   
File Size253KB,5 Pages
ManufacturerMicro Commercial Co
Environmental Compliance
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BC546-AP Overview

TRANS NPN 65V 0.1A TO-92

BC546-AP Parametric

Parameter NameAttribute value
Transistor typeNPN
Current - Collector (Ic) (Maximum)100mA
Voltage - collector-emitter breakdown (maximum)65V
Vce saturation value (maximum value) when different Ib,Ic300mV @ 5mA,100mA
Current - collector cutoff (maximum)-
DC current gain (hFE) at different Ic, Vce (minimum value)200 @ 2mA,5V
Power - Max625mW
Frequency - Transition300MHz
Operating temperature-55°C ~ 150°C(TJ)
Installation typeThrough hole
Package/casingTO-226-3, TO-92-3 (TO-226AA) (formed lead)
Supplier device packagingTO-92
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla
Street Chatsworth

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BC546B
BC547A/B/C
BC548A/B/C
NPN Silicon
Amplifier Transistor
625mW
A
Features
Through Hole Package
150
o
C Junction Temperature
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
and MSL rating 1
Marking:Type Number
Lead Free Finish/Rohs Compliant) ("P"Suffix designates
Compliant. See ordering information)
Mechanical Data
Case: TO-92, Molded Plastic
Polarity: indicated as
below.
TO-92
E
B
Maximum Ratings @ 25
o
C Unless Otherwise Specified
Charateristic
Collector-Emitter Voltage
Symbol Value
65
V
CEO
45
30
80
V
CBO
50
30
V
EBO
6.0
I
C
P
d
P
d
R
q
JA
Unit
V
C
Collector-Base Voltage
BC546
BC547
BC548
BC546
BC547
BC548
V
V
mA
mW
mW/
o
C
W
mW/
o
C
o
D
Emitter-Base Voltage
Collector Current(DC)
Power Dissipation@T
A
=25
o
C
Power Dissipation@T
C
=25 C
Thermal Resistance, Junction to
Ambient Air
Thermal Resistance, Junction to
Case
Operating & Storage Temperature
o
100
625
5.0
1.5
12
200
83.3
1
2
G
3
1-Collector
2-Base
3-Emitter
DIMENSIONS
INCHES
MIN
.170
.170
.550
.010
.130
.096
MM
MIN
4.33
4.30
13.97
0.36
3.30
2.44
C/W
C/W
o
R
q
JC
o
T
j
, T
STG
-55~150
C
DIM
A
B
C
D
E
G
MAX
.190
.190
.590
.020
.160
.104
MAX
4.83
4.83
14.97
0.56
3.96
2.64
NOTE
www.mccsemi.com
Revision: 8
1 of 5
2010/08/18

BC546-AP Related Products

BC546-AP BC546B-AP BC547A-AP BC547C-AP BC547-AP BC547B-AP
Description TRANS NPN 65V 0.1A TO-92 TRANS NPN 65V 0.1A TO-92 TRANS NPN 45V 0.1A TO-92 TRANS NPN 45V 0.1A TO-92 TRANS NPN 45V 0.1A TO-92 TRANS NPN 45V 0.1A TO-92
Transistor type NPN NPN NPN NPN NPN NPN
Current - Collector (Ic) (Maximum) 100mA 100mA 100mA 100mA 100mA 100mA
Voltage - collector-emitter breakdown (maximum) 65V 65V 45V 45V 45V 45V
Vce saturation value (maximum value) when different Ib,Ic 300mV @ 5mA,100mA 300mV @ 5mA,100mA 300mV @ 5mA,100mA 300mV @ 5mA,100mA 300mV @ 5mA,100mA 300mV @ 5mA,100mA
DC current gain (hFE) at different Ic, Vce (minimum value) 200 @ 2mA,5V 200 @ 2mA,5V 110 @ 2mA,5V 420 @ 2mA,5V 110 @ 2mA,5V 200 @ 2mA,5V
Power - Max 625mW 625mW 625mW 625mW 625mW 625mW
Frequency - Transition 300MHz 300MHz 300MHz 300MHz 300MHz 300MHz
Operating temperature -55°C ~ 150°C(TJ) -55°C ~ 150°C(TJ) -55°C ~ 150°C(TJ) -55°C ~ 150°C(TJ) -55°C ~ 150°C(TJ) -55°C ~ 150°C(TJ)
Installation type Through hole Through hole Through hole Through hole Through hole Through hole
Package/casing TO-226-3, TO-92-3 (TO-226AA) (formed lead) TO-226-3, TO-92-3 (TO-226AA) (formed lead) TO-226-3, TO-92-3 (TO-226AA) (formed lead) TO-226-3, TO-92-3 (TO-226AA) (formed lead) TO-226-3, TO-92-3 (TO-226AA) (formed lead) TO-226-3, TO-92-3 (TO-226AA) (formed lead)
Supplier device packaging TO-92 TO-92 TO-92 TO-92 TO-92 TO-92

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