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TSZU52C30 RGG

Description
DIODE ZENER 30V 150MW 0603
Categorysemiconductor    Discrete semiconductor   
File Size237KB,6 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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TSZU52C30 RGG Overview

DIODE ZENER 30V 150MW 0603

TSZU52C30 RGG Parametric

Parameter NameAttribute value
Voltage - Zener (nominal) (Vz)30V
Tolerance±5%
Power - Max150mW
Impedance (max) (Zzt)80 Ohms
Current at different Vr - Reverse leakage current100nA @ 23V
Voltage at different If - Forward (Vf900mV @ 10mA
Operating temperature-55°C ~ 125°C(TJ)
Installation typesurface mount
Package/casing0201 (0603 Metric)
Supplier device packaging603
TSZU52C2V0 - TSZU52C39
Taiwan Semiconductor
Small Signal Product
SMD Zener Diode
FEATURES
- Wide zener voltage range selection: 2.0V to 39V
- Designed for mounting on small surface
- Extremely thin / leadless package
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
0603
MECHANICAL DATA
- Case: 0603
- Terminal: Gold plated, solderable per
MIL-STD-750, method 2026
- Polarity: Indicated by cathode band
- Weight: 3 mg (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Power Dissipation
Forward Voltage
SYMBOL
P
D
V
F
I
FSM
T
J
, T
STG
VALUE
150
0.9
2
-55 to +125
UNIT
mW
V
A
°C
@ I
F
= 10mA
Forward Current, Surge Peak 8.3 ms Single Half
Sine-Wave Superimposed on Rate Load
Junction and Storage Temperature Range
Version: F1601

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