IC DRAM 256M PARALLEL 54TSOP
Parameter Name | Attribute value |
memory type | Volatile |
memory format | DRAM |
technology | SDRAM |
storage | 256Mb (16M x 16) |
Clock frequency | 200MHz |
Write cycle time - words, pages | - |
interview time | 5ns |
memory interface | in parallel |
Voltage - Power | 3 V ~ 3.6 V |
Operating temperature | 0°C ~ 70°C(TA) |
Installation type | surface mount |
Package/casing | 54-TSOP (0.400", 10.16mm wide) |
Supplier device packaging | 54-TSOP II |
W9825G6KH-5 TR | W9825G6KH-5 | |
---|---|---|
Description | IC DRAM 256M PARALLEL 54TSOP | IC DRAM 256M PARALLEL 54TSOP |
technology | SDRAM | CMOS |