FMS6G10US60S datasheet, PDF - EEWORLD Datasheet

FMS6G10US60S: DescriptionIGBT 600V 10A 25PM-AA; Categorysemiconductor Discrete semiconductor; File Size787KB，10 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn; Environmental Compliance

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IGBT 600V 10A 25PM-AA

Parameter Name	Attribute value
IGBT type	-
Configuration	three phase inverter
Voltage - collector-emitter breakdown (maximum)	600V
Current - Collector (Ic) (Maximum)	10A
Power - Max	66W
Vce(on) when different Vge,Ic	2.7V @ 15V，10A
Current - collector cutoff (maximum)	250µA
Input capacitance (Cies) at different Vce	.71nF @ 30V
enter	Single phase bridge rectifier
NTC thermistor	yes
Operating temperature	-40°C ~ 150°C（TJ）
Installation type	Base installation
Package/casing	25PM-AA
Supplier device packaging	25PM-AA

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