HUFA75433S3S
March 2002
HUFA75433S3S
N-Channel UltraFET
®
MOSFETs
60V, 64A, 16mΩ
General Description
These N-Channel power MOSFETs are manufactured us-
ing the innovative UltraFET
®
process. This advanced pro-
cess technology achieves very low on-resistance per
silicon area, resulting in outstanding performance. This de-
vice is capable of withstanding high energy in the ava-
lanche mode and the diode exhibits very low reverse
recovery time and stored charge. It was designed for use in
applications where power efficiency is important, such as
switching regulators, switching convertors, motor drivers,
relay drivers, low-voltage bus switches, and power man-
agement in portable and battery-operated products.
Applications
• Motor and Load Control
• Powertrain Management
Features
• 175°C Maximum Junction Temperature
• UIS Capability (Single Pulse and Repetitive Pulse)
• Ultra-Low On-Resistance r
DS(ON)
= 0.016Ω, V
GS
=
10V
D
D
G
S
TO-263AB
FDB Series
G
S
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
V
DSS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
I
D
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
=
Pulsed
E
AS
P
D
T
J
, T
STG
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above
25
o
C
Operating and Storage Temperature
125
o
C,
V
GS
= 10V, R
θJA
=
43
o
C/W)
64
5
Figure 4
250
150
1
-55 to 175
A
A
A
mJ
W
W/
o
C
o
C
Parameter
Ratings
60
±20
Units
V
V
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Thermal Resistance Junction to Case TO-263
Thermal Resistance Junction to Ambient TO-263
Thermal Resistance Junction to Ambient TO-263, 1in
2
copper pad area
1
62
43
o
o
C/W
C/W
o
C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2002 Fairchild Semiconductor Corporation
Rev. A
HUFA75433S3S
Package Marking and Ordering Information
Device Marking
75433S3
75433S3
Device
HUFA75433S3ST
HUFA75433S3S
Package
TO-263
TO-263
Reel Size
330mm
Tube
Tape Width
24mm
N/A
Quantity
800 units
50 units
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
VDSS
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= 250µA, V
GS
= 0V
V
DS
= 55V, V
GS
= 0V
V
DS
= 45V
V
GS
= 0V
V
GS
=
±20V
T
C
= 150
o
C
60
-
-
-
-
-
-
-
-
1
250
±100
µA
nA
V
On Characteristics
V
GS(TH)
r
DS(ON)
Gate to Source Threshold Voltage
Drain to Source On Resistance
V
GS
= V
DS
, I
D
= 250µA
I
D
= 64A, V
GS
= 10V
I
D
= 64A, V
GS
= 10V,
T
J
= 175
o
C
2
-
-
-
0.013
0.029
4
0.016
0.035
Ω
V
Dynamic Characteristics
C
ISS
C
OSS
C
RSS
Q
g(TOT)
Q
g(10)
Q
g(TH)
Q
gs
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 20V
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
(V
GS
= 10V)
-
-
V
DD
= 30V, I
D
= 64A
V
GS
= 10V, R
GS
= 6.2Ω
-
-
-
-
-
11
92
39
26
-
155
-
-
-
-
98
ns
ns
ns
ns
ns
ns
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
V
GS
= 0V to 20V
V
GS
= 0V to 10V V = 30V
DD
V
GS
= 0V to 2V I
D
= 64A
I
g
= 1.0mA
-
-
-
-
-
-
-
1550
540
150
90
50
3
6
20
-
-
-
117
65
3.9
-
-
pF
pF
pF
nC
nC
nC
nC
nC
Switching Characteristics
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Drain-Source Diode Characteristics
V
SD
t
rr
Q
RR
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
I
SD
= 64A
I
SD
= 32A
I
SD
= 64A, dI
SD
/dt = 100A/µs
I
SD
= 64A, dI
SD
/dt = 100A/µs
-
-
-
-
-
-
-
-
1.25
1.0
37
42
V
V
ns
nC
Notes:
1:
Starting T
J
= 25°C, L = 200
µ
H, I
AS
= 50A
©2002 Fairchild Semiconductor Corporation
Rev. A
HUFA75433S3S
Typical Characteristics
T
C
= 25°C unless otherwise noted
1.2
POWER DISSIPATION MULTIPLIER
70
60
I
D
, DRAIN CURRENT (A)
0
25
50
75
100
125
150
175
50
40
30
20
10
0
T
C
, CASE TEMPERATURE (
o
C)
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (
o
C)
1.0
0.8
0.6
0.4
0.2
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
2
1
Z
θJC
, NORMALIZED
THERMAL IMPEDANCE
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
x R
θJC
+ T
C
10
-3
10
-2
10
-1
10
0
10
1
SINGLE PULSE
0.01
10
-5
10
-4
t, RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
800
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
I
DM
, PEAK CURRENT (A)
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
175 - T
C
150
V
GS
= 20V
100
V
GS
= 10V
50
10
-5
10
-4
10
-3
10
-2
t, PULSE WIDTH (s)
10
-1
10
0
10
1
Figure 4. Peak Current Capability
©2002 Fairchild Semiconductor Corporation
Rev. A
HUFA75433S3S
Typical Characteristics
T
C
= 25°C unless otherwise noted
1000
1000
If R = 0
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
100
STARTING T
J
= 25
o
C
100µs
100
1ms
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
SINGLE PULSE
T
J
= MAX RATED
T
C
= 25
o
C
1
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
I
AS
, AVALANCHE CURRENT (A)
I
D
, DRAIN CURRENT (A)
STARTING T
J
= 150
o
C
10
10ms
1
0.001
0.01
0.1
1
10
t
AV
, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515.
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive Switching
Capability
100
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
75
V
GS
= 20V
V
GS
= 10V
V
GS
= 6V
75
50
T
J
= 175
o
C
25
T
J
= 25
o
C
T
J
= -55
o
C
0
3.0
3.5
4.0
4.5
5.0
5.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
6.0
50
V
GS
= 5V
25
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
0
0
0.5
1.0
1.5
2.0
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
2.5
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
NORMALIZED GATE
THRESHOLD VOLTAGE
2.0
1.2
Figure 8. Saturation Characteristics
V
GS
= V
DS
, I
D
= 250µA
1.0
1.5
0.8
1.0
V
GS
= 10V, I
D
= 64A
0.5
-80
-40
0
40
80
120
(
o
C)
160
200
T
J
, JUNCTION TEMPERATURE
0.6
-80
-40
0
40
80
120
(
o
C)
160
200
T
J
, JUNCTION TEMPERATURE
Figure 9. Normalized Drain to Source On
Resistance vs Junction Temperature
Figure 10. Normalized Gate Threshold Voltage vs
Junction Temperature
©2002 Fairchild Semiconductor Corporation
Rev. A
HUFA75433S3S
Typical Characteristics
T
C
= 25°C unless otherwise noted
1.2
I
D
= 250µA
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
4000
C
ISS
=
C
GS
+ C
GD
C, CAPACITANCE (pF)
1.1
1000
C
RSS
=
C
GD
C
OSS
≅
C
DS
+ C
GD
1.0
100
V
GS
= 0V, f = 1MHz
0.9
-80
-40
0
40
80
120
(
o
C)
160
200
T
J
, JUNCTION TEMPERATURE
60
0.1
1
10
60
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 11. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
DD
= 30V
8
Figure 12. Capacitance vs Drain to Source
Voltage
6
4
WAVEFORMS IN
DESCENDING ORDER:
I
D
= 64A
I
D
= 40A
0
10
20
30
40
50
2
0
Q
g
, GATE CHARGE (nC)
Figure 13. Gate Charge Waveforms for Constant Gate Currents
Test Circuits and Waveforms
V
DS
BV
DSS
L
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
V
GS
DUT
t
P
0V
R
G
-
I
AS
V
DD
V
DD
t
P
V
DS
+
I
AS
0.01Ω
0
t
AV
Figure 14. Unclamped Energy Test Circuit
Figure 15. Unclamped Energy Waveforms
©2002 Fairchild Semiconductor Corporation
Rev. A
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