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NVMFS5C673NLAFT3G

Description
MOSFET N-CHANNEL 60V 50A 5DFN
Categorysemiconductor    Discrete semiconductor   
File Size130KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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NVMFS5C673NLAFT3G Overview

MOSFET N-CHANNEL 60V 50A 5DFN

NVMFS5C673NLAFT3G Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)60V
Current - Continuous Drain (Id) at 25°C50A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)4.5V,10V
Rds On (maximum value) when different Id, Vgs9.2 milliohms @ 25A, 10V
Vgs (th) (maximum value) when different Id2V @ 35µA
Gate charge (Qg) at different Vgs (maximum value)9.5nC @ 10V
Vgs (maximum value)±20V
Input capacitance (Ciss) at different Vds (maximum value)880pF @ 25V
FET function-
Power dissipation (maximum)46W(Tc)
Operating temperature-55°C ~ 175°C(TJ)
Installation typesurface mount
Supplier device packaging5-DFN(5x6)(8-SOFL)
Package/casing8-PowerTDFN, 5-lead

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Description MOSFET N-CHANNEL 60V 50A 5DFN Single N−Channel Power MOSFET Single N−Channel Power MOSFET Single N−Channel Power MOSFET Single N−Channel Power MOSFET Single N−Channel Power MOSFET MOSFET N-CHANNEL 60V 50A 5DFN MOSFET N-CHANNEL 60V 50A 5DFN MOSFET N-CHANNEL 60V 50A 5DFN

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