STTH16L06C-Y
Automotive Turbo 2 ultrafast high voltage rectifier
Datasheet - production data
Description
A1
K
A2
K
The STTH16L06C-Y is specially suited for use in
switching power supplies as rectifier and
discontinuous mode PFC boost diode for
automotive applications.
Table 1: Device summary
Symbol
I
F(AV)
V
RRM
A2
Value
2x8A
600 V
+175 °C
1.05 V
35 ns
T
j
V
F
(typ.)
t
rr
(max.)
A1
TO-220AB
K
K
K A2
A1
D²PAK
Features
AEC-Q101 qualified
Low reverse recovery current
Reduce switching and conduction losses
Low thermal resistance
Ultrafast switching
PPAP capable
ECOPACK
®
2 compliant component
September 2017
DocID026936 Rev 3
1/12
www.st.com
This is information on a product in full production.
Characteristics
STTH16L06C-Y
1
Characteristics
Table 2: Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified)
Symbol
V
RRM
I
F(RMS)
Parameter
Repetitive peak reverse voltage
Forward rms current
T
C
= 140 °C
I
F(AV)
Average forward current δ = 0.5,
square wave
T
C
= 135 °C
T
C
= 130 °C
T
C
= 120 °C
I
FSM
T
stg
T
j
Surge non repetitive forward current
Storage temperature range
Operating junction temperature range
Table 3: Thermal parameters
Symbol
R
th(j-c)
R
th(c)
Junction to case
TO-220AB, D²PAK
Coupling
Total
Parameter
Per diode
Max. value
2.5
°C/W
1.6
0.7
°C/W
Unit
Per diode
Per device
Per diode
Per device
T
j
= -40 °C to +175 °C
Value
600
30
8
16
A
10
20
120
-65 to +175
-40 to +175
A
°C
°C
Unit
V
A
t
p
= 10 ms sinusoidal
When the diodes 1 and 2 are used simultaneously:
ΔT
j (diode1)
= P
(diode1)
x R
th(j-c)
(per diode) + P
(diode2)
x R
th(c)
Table 4: Static electrical characteristics (per diode)
Symbol
I
R
(1)
Parameter
Reverse leakage current
Test conditions
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
V
F
(2)
Forward voltage drop
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
Notes:
(1)
Min.
-
-
-
-
-
-
Typ.
Max.
8
Unit
µA
V
R
= V
RRM
25
240
1.80
I
F
= 8 A
1.05
1.35
2.08
V
I
F
= 16 A
1.28
1.64
Pulse test: t
p
= 5 ms, δ < 2%
test: t
p
= 380 µs, δ < 2%
(2)
Pulse
To evaluate the conduction losses, use the following equation:
P = 1.06 x I
F(AV)
+ 0.036 x I
F2(RMS)
2/12
DocID026936 Rev 3
STTH16L06C-Y
Table 5: Dynamic electrical characteristics (per diode)
Symbol
Parameter
Test conditions
I
F
= 0.5 A
I
R
= 1 A
I
rr
= 0.25 A
I
F
= 1 A
V
R
= 30 V
dl
F
/dt = 50 A/µs
I
F
= 8 A
V
R
= 400 V
dl
F
/dt = 100 A/µs
I
F
= 8 A
V
FR
= 1.1 x V
Fmax.
,
dl
F
/dt = 100 A/µs
Min.
-
Characteristics
Typ.
Max.
35
ns
-
40
55
Unit
t
rr
Reverse recovery time
T
j
= 25 °C
I
RM
t
fr
V
FP
Reverse recovery current
Forward recovery time
Forward recovery voltage
T
j
= 125 °C
-
-
-
4.5
6.5
200
A
ns
V
T
j
= 25 °C
3.5
DocID026936 Rev 3
3/12
Characteristics
STTH16L06C-Y
1.1
Characteristics (curves)
Figure 1: Conduction losses versus average
forward current (per diode)
P(W)
15
Figure 2: Forward voltage drop versus forward
current (per diode)
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
10
δ= 1
5
T
I
F (AV)
(A)
0
0
2
4
6
δ
=tp/T
8
tp
10
Figure 3: Relative variation of thermal impedance
junction to case versus pulse duration
(TO-220AB, D²PAK)
Z
th (j-c)
/R
th (j-c )
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
S in gle puls e
Figure 4: Peak reverse recovery current versus
dI
F
/dt (typical values, per diode)
I
RM
(A)
18
16
14
12
10
8
6
4
2
I
F
=0 .5 x I
F(AV )
V
R
=400V
T
j
=125°C
I
F
=2 x I
F(AV )
I
F
=I
F(AV )
t
p
(s )
1.E -02
1.E -01
1.E +00
dI
F
/dt(A/µs)
0
0
50
100
150
200
250
300
350
400
450
500
1.E -03
Figure 5: Reverse recovery time versus dl
F
/dt
(typical values, per diode)
t
rr
(ns)
400
V
R
=400V
T
j
=125°C
Figure 6: Reverse recovery charges versus dl
F
/dt
(typical values, per diode)
Q
rr
(nC)
800
750
700
650
600
V
R
=400V
T
j
=125°C
I
F
=2 x I
F(AV )
350
300
I
F
=2 x I
F(AV )
550
500
I
F
=I
F(AV )
250
200
I
F
=I
F(AV )
450
400
350
I
F
=0.5 x I
F(AV )
I
F
=0.5 x I
F(AV )
150
100
50
300
250
200
150
100
dI
F
/dt(A/µs)
0
50
dI
F
/dt(A/µs)
0
100
200
300
400
500
0
350
400
450
500
0
50
100
150
200
250
300
4/12
DocID026936 Rev 3
STTH16L06C-Y
Figure 7: Relative variations of dynamic
parameters versus junction temperature
Characteristics
Figure 8: Reverse recovery softness factor versus
dl
F
/dt (typical values, per diode)
Sfactor
1.6
I
F
< 2 x I
F(AV )
V
R
=400V
T
j
=125°C
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
dI
F
/dt(A/µs)
0
50
100
150
200
250
300
350
400
450
500
Figure 9: Forward recovery time versus dl
F
/dt
(typical values, per diode)
t
fr
(ns)
180
160
140
I
F
=I
F(AV )
V
F R
=1.1 x V
F
max.
T
j
=125°C
Figure 10: Transient peak forward voltage versus
dl
F
/dt (typical values, per diode)
V
F P
(V)
16
15
14
I
F
=I
F(AV )
T
j
=125°C
13
12
11
10
9
8
7
120
100
80
60
40
20
6
5
4
3
2
dI
F
/dt(A/µs)
0
0
100
200
300
400
500
1
0
0
50
100
150
dI
F
/dt(A/µs)
200
250
300
350
400
450
500
Figure 11: Junction capacitance versus reverse
voltage applied (typical values, per diode)
C(pF)
100
F =1MH z
V
O SC
=30mV
RMS
T
j
=25°C
Figure 12: Thermal resistance, junction to ambient,
versus copper surface under tab
(epoxy FR4, coper thickness = 35 µm)(D2PAK)
R
th (j-a)
(
°C/W)
80
70
60
50
10
40
30
20
V
R
(V)
1
1
10
100
1000
10
S
C U
(c m²)
0
0
5
10
15
20
25
30
35
40
DocID026936 Rev 3
5/12
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