PMPB19XP,115 datasheet, PDF - EEWORLD Datasheet

PMPB19XP,115: DescriptionMOSFET P-CH 20V 7.2A 6DFN; CategoryDiscrete semiconductor The transistor; File Size743KB，14 Pages; ManufacturerNexperia; Websitehttps://www.nexperia.com; Environmental Compliance

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PMPB19XP,115 Overview

MOSFET P-CH 20V 7.2A 6DFN

Parameter Name	Attribute value
Brand Name	Nexperia
Is it Rohs certified?	conform to
Maker	Nexperia
Parts packaging code	DFN
package instruction	SMALL OUTLINE, S-PDSO-N6
Contacts	6
Manufacturer packaging code	SOT1220
Reach Compliance Code	compliant
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	20 V
Maximum drain current (ID)	7.2 A
Maximum drain-source on-resistance	0.0225 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	S-PDSO-N6
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	6
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	SQUARE
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	P-CHANNEL
Maximum pulsed drain current (IDM)	30 A
Guideline	IEC-60134
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	NO LEAD
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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