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IS63WV1288DBLL-10TLI-TR

Description
Standard SRAM, 128KX8, 10ns, CMOS, PDSO32
Categorystorage   
File Size475KB,20 Pages
ManufacturerIntegrated Silicon Solution ( ISSI )
Environmental Compliance
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IS63WV1288DBLL-10TLI-TR Overview

Standard SRAM, 128KX8, 10ns, CMOS, PDSO32

IS63WV1288DBLL-10TLI-TR Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerIntegrated Silicon Solution ( ISSI )
Reach Compliance Codecompliant
Factory Lead Time8 weeks
Is SamacsysN
Maximum access time10 ns
I/O typeCOMMON
JESD-30 codeR-PDSO-G32
memory density1048576 bit
Memory IC TypeSTANDARD SRAM
memory width8
Number of terminals32
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize128KX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP
Encapsulate equivalent codeTSOP32,.46
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
power supply2.5/3.3 V
Certification statusNot Qualified
Maximum standby current0.000055 A
Minimum standby current2 V
Maximum slew rate0.055 mA
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Base Number Matches1
IS63WV1288DALL/DALS
IS63WV1288DBLL/DBLS
IS64WV1288DBLL/DBLS
128K x 8  HIGH-SPEED CMOS STATIC RAM
FEATURES
HIGH SPEED: (IS63/64WV1288DALL/DBLL)
• High-speed access time: 8, 10, 12, 20 ns
• Low Active Power: 135 mW (typical)
• Low Standby Power: 12 µW (typical)
CMOS standby
LOW POWER: (IS63/64WV1288DALS/DBLS)
• High-speed access time: 25, 35 ns
• Low Active Power: 55 mW (typical)
• Low Standby Power: 12 µW (typical)
CMOS standby
• Single power supply
— V
dd
1.65V to 2.2V (IS63WV1288DAxx)
— V
dd
2.4V to 3.6V (IS63/64WV1288DBxx)
• Multiple center power and ground pins for
greater noise immunity
• Easy memory expansion with
CE
and
OE
options
CE
power-down
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Lead-free available
DECEMBER 2011
DESCRIPTION
The
ISSI
IS63/64WV1288Dxxx is a very high-speed,
low power, 131,072-word by 8-bit CMOS static RAM.
The IS63/64WV1288DBLL is fabricated using
ISSI
's
high-performance CMOS technology. This highly reliable
process coupled with innovative circuit design
techniques, yields higher performance and low power
consumption devices.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be re-
duced down to 25 µW (typical) with CMOS input levels.
The IS63/64WV1288DBLL operates from a single V
dd
power supply. The IS63/64WV1288Dxxx is available in
32-pin TSOP (Type II), 32-pin sTSOP (Type I), 48-Ball
miniBGA (6mm x 8mm), 32-pin SOJ (400-mil) and 32-
pin SOJ (300-mil) packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A16
DECODER
128K X 8
MEMORY ARRAY
VDD
GND
I/O
DATA
CIRCUIT
I/O0-I/O7
COLUMN I/O
CE
OE
WE
CONTROL
CIRCUIT
Copyright © 2011 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI
assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device
specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be ex-
pected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon
Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev.  B
12/15/2011
1

IS63WV1288DBLL-10TLI-TR Related Products

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Description Standard SRAM, 128KX8, 10ns, CMOS, PDSO32 Standard SRAM, 128KX8, 10ns, CMOS, PDSO32, 0.300 INCH, LEAD FREE, SOJ-32 Standard SRAM, 128KX8, 10ns, CMOS, PDSO32 Standard SRAM, 128KX8, 10ns, CMOS, PDSO32, 0.400 INCH, LEAD FREE, TSOP2-32 Standard SRAM, 128KX8, 10ns, CMOS, PDSO32 Standard SRAM, 128KX8, 10ns, CMOS, PDSO32, SOJ-32 IC SRAM 1MBIT 10NS 32SOIC
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to
Reach Compliance Code compliant compli compliant compliant compliant compliant compliant
Maximum access time 10 ns 10 ns 10 ns 10 ns 10 ns 10 ns 10 ns
JESD-30 code R-PDSO-G32 R-PDSO-J32 R-PDSO-J32 R-PDSO-G32 R-PDSO-G32 R-PDSO-J32 R-PDSO-J32
memory density 1048576 bit 1048576 bi 1048576 bit 1048576 bit 1048576 bit 1048576 bit 1048576 bit
Memory IC Type STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
memory width 8 8 8 8 8 8 8
Number of terminals 32 32 32 32 32 32 32
word count 131072 words 131072 words 131072 words 131072 words 131072 words 131072 words 131072 words
character code 128000 128000 128000 128000 128000 128000 128000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C
organize 128KX8 128KX8 128KX8 128KX8 128KX8 128KX8 128KX8
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TSOP SOJ SOJ TSOP2 TSSOP SOJ SOJ
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE, THIN PROFILE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE SMALL OUTLINE
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
surface mount YES YES YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL
Terminal form GULL WING J BEND J BEND GULL WING GULL WING J BEND J BEND
Terminal pitch 1.27 mm 1.27 mm 1.27 mm 1.27 mm 0.5 mm 1.27 mm 1.27 mm
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL
Maker Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) - Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI )
Factory Lead Time 8 weeks 8 weeks 8 weeks 8 weeks - - 8 weeks
I/O type COMMON COMMON COMMON COMMON COMMON COMMON -
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE -
Encapsulate equivalent code TSOP32,.46 SOJ32,.34 SOJ32,.34 TSOP32,.46 TSSOP32,.56,20 SOJ32,.44 -
power supply 2.5/3.3 V 2.5/3.3 V 2.5/3.3 V 2.5/3.3 V 2.5/3.3 V 2.5/3.3 V -
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified -
Maximum standby current 0.000055 A 0.000055 A 0.000055 A 0.000055 A 0.000055 A 0.000055 A -
Minimum standby current 2 V 2 V 2 V 2 V 2 V 2 V -
Maximum slew rate 0.055 mA 0.055 mA 0.055 mA 0.055 mA 0.055 mA 0.055 mA -
Base Number Matches 1 1 1 1 1 - -
package instruction - SOJ, SOJ32,.34 - TSOP2, TSOP32,.46 - SOJ, SOJ32,.44 SOJ,
length - 20.955 mm - 20.95 mm - 20.95 mm 20.95 mm
Number of functions - 1 - 1 - 1 1
Peak Reflow Temperature (Celsius) - 260 - 260 - NOT SPECIFIED NOT SPECIFIED
Maximum seat height - 3.405 mm - 1.2 mm - 3.76 mm 3.76 mm
Maximum supply voltage (Vsup) - 3.6 V - 3.6 V - 3.6 V 3.6 V
Minimum supply voltage (Vsup) - 2.4 V - 2.4 V - 2.4 V 2.4 V
Maximum time at peak reflow temperature - 40 - 40 - NOT SPECIFIED NOT SPECIFIED
width - 7.62 mm - 10.16 mm - 10.16 mm 10.16 mm

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