AO3414 datasheet, PDF - EEWORLD Datasheet

AO3414: Description4.2 A, 20 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-236; CategoryDiscrete semiconductor The transistor; File Size106KB，4 Pages; ManufacturerAlpha & Omega Semiconductor; Websitehttp://www.aosmd.com/about; Environmental Compliance

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AO3414 Overview

4.2 A, 20 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-236

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Alpha & Omega Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compli
ECCN code	EAR99
Samacsys Descripti	Trans MOSFET N-CH 20V 3A 3-Pin SOT-23
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	20 V
Maximum drain current (ID)	4.2 A
Maximum drain-source on-resistance	0.05 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-236
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	30 A
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

	AO3414	AO3414L
Description	4.2 A, 20 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-236	4.2 A, 20 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-236
Maker	Alpha & Omega Semiconductor	Alpha & Omega Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-G3	HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
Reach Compliance Code	compli	compli
ECCN code	EAR99	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	20 V	20 V
Maximum drain current (ID)	4.2 A	4.2 A
Maximum drain-source on-resistance	0.05 Ω	0.05 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-236	TO-236
JESD-30 code	R-PDSO-G3	R-PDSO-G3
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	30 A	30 A
surface mount	YES	YES
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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