DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor
Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
Maker | NXP |
package instruction | O-LELF-R2 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Minimum breakdown voltage | 31 V |
Shell connection | ISOLATED |
Maximum clamping voltage | 46.2 V |
Configuration | SINGLE |
Diode component materials | SILICON |
Diode type | TRANS VOLTAGE SUPPRESSOR DIODE |
JESD-30 code | O-LELF-R2 |
Maximum non-repetitive peak reverse power dissipation | 300 W |
Number of components | 1 |
Number of terminals | 2 |
Maximum operating temperature | 175 °C |
Minimum operating temperature | -65 °C |
Package body material | GLASS |
Package shape | ROUND |
Package form | LONG FORM |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
polarity | UNIDIRECTIONAL |
Maximum power dissipation | 0.8 W |
Certification status | Not Qualified |
Maximum reverse current | 5 µA |
surface mount | YES |
technology | AVALANCHE |
Terminal form | WRAP AROUND |
Terminal location | END |
Maximum time at peak reflow temperature | NOT SPECIFIED |
Base Number Matches | 1 |