numbers reflect the limitations of the test circuit rather than the
device itself.
IS
≤
-
ID
74A
di
/
dt
≤
700A/µs
VR
≤
VDSS TJ
≤
150
°
C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.30
0.25
0.9
0.7
0.20
0.15
0.10
0.05
0
10
-5
0.5
Note:
PDM
t1
t2
Peak TJ = PDM x Z
θJC
+ TC
Duty Factor D = t1/t2
9-2004
0.3
050-7047 Rev B
0.1
0.05
SINGLE PULSE
10
-3
10
-2
10
-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
-4
1.0
Typical Performance Curves
160
140
120
100
80
60
40
20
0
APT20M34BFLL_SFLL
VGS=10 &15V
6.5V
RC MODEL
Junction
temp. (°C)
0.131
Power
(watts)
0.180
Case temperature. (°C)
0.161F
0.00789F
I
D
, DRAIN CURRENT (AMPERES)
6V
5.5V
5V
4.5V
4V
FIGURE 2, HIGH VOLTAGE OUTPUT CHARACTERISTICS
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
120
100
80
60
40
20
0
TJ = +25°C
TJ = +125°C
TJ = -55°C
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
0
5
10
15
20
25
30
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.4
NORMALIZED TO
V
= 10V @ 37A
GS
I
D
, DRAIN CURRENT (AMPERES)
1.3
1.2
VGS=10V
1.1
1.0
0.9
0.8
VGS=20V
0
20
40
60
80
100
120
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
0
2
4
6
8
10
12
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
80
70
I
D
, DRAIN CURRENT (AMPERES)
BV
DSS
, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
1.15
1.10
60
50
40
30
20
10
0
25
1.05
1.00
0.95
50
75
100
125
150
T
C
, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
0.90
2.5
I
V
D
-25
0
25
50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0
25
50
75 100 125 150
T
C
, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
-50
-25
-50
= 37A
= 10V
2.0
1.5
1.0
V
GS
(TH), THRESHOLD VOLTAGE
(NORMALIZED)
GS
0.5
0.0
-50
-25
0
25 50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
050-7047 Rev B
9-2004
297
OPERATION HERE
LIMITED BY RDS (ON)
20,000
10,000
APT20M34BFLL_SFLL
I
D
, DRAIN CURRENT (AMPERES)
100
100µS
C, CAPACITANCE (pF)
Ciss
1,000
Coss
10
1mS
10mS
100
Crss
1
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
10
100 200
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
D
0
10
20
30
40
50
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
I
DR
, REVERSE DRAIN CURRENT (AMPERES)
10
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
= 74A
200
100
TJ =+150°C
TJ =+25°C
12
VDS=40V
VDS=100V
8
VDS=160V
10
4
20 30 40 50 60 70 80 90 100
Q
g
, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
50
t
d(off)
40
0
0
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
120
100
V
DD
G
= 133V
R
= 5Ω
T = 125°C
J
L = 100µH
V
DD
G
t
d(on)
and t
d(off)
(ns)
= 133V
80
t
r
and t
f
(ns)
30
R
= 5Ω
T = 125°C
J
t
f
60
40
20
0
10
t
r
L = 100µH
20
t
d(on)
10
0
10
70
90
110
130
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
V
DD
G
30
50
70
90
110
130
I
D
(A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
1200
30
50
1200
= 133V
R
= 5Ω
1000
SWITCHING ENERGY (µJ)
T = 125°C
L = 100µH
E
ON
includes
diode reverse recovery.
800
600
400
200
0
10
E
on
SWITCHING ENERGY (µJ)
J
1000
800
600
400
200
0
V
I
E
off
E
on
9-2004
E
off
DD
= 133V
D
J
= 74A
T = 125°C
L = 100µH
E
ON
includes
diode reverse recovery.
050-7047 Rev B
70
90
110
130
I
D
(A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
30
50
10 15 20 25 30 35 40 45 50
R
G
, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
5
Typical Performance Curves
APT20M34BFLL_SFLL
90%
10%
Gate Voltage
T
J
125°C
Gate Voltage
T
J
125°C
t
d(on)
t
r
90%
t
d(off)
t
f
Drain Voltage
90%
Drain Current
5%
Switching Energy
10%
5%
Drain Voltage
Switching Energy
10%
0
Drain Current
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT60S20
V
DD
I
D
V
DS
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-247 Package Outline
Drain
(Heat Sink)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
6.15 (.242) BSC
D PAK Package Outline
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05 (.632)
13.41 (.528)
13.51 (.532)
3
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
1.04 (.041)
1.15 (.045)
Drain
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
Revised
4/18/95
13.79 (.543)
13.99 (.551)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
0.46 (.018)
0.56 (.022) {3 Plcs}
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
19.81 (.780)
20.32 (.800)
Gate
Drain
Source
5.45 (.215) BSC
{2 Plcs.}
Heat Sink (Drain)
and Leads
are Plated
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Source
Drain
Gate
Dimensions in Millimeters (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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