ARS50G datasheet, PDF - EEWORLD Datasheet

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ARS50G: Description50 A, 400 V, SILICON, RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size191KB，2 Pages; ManufacturerTaiwan Semiconductor; Websitehttp://www.taiwansemi.com/; Environmental Compliance

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ARS50G Overview

50 A, 400 V, SILICON, RECTIFIER DIODE

ARS50G Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Taiwan Semiconductor
package instruction	O-PEDB-N2
Reach Compliance Code	compli
Is Samacsys	N
Other features	LOW LEAKAGE CURRENT
application	GENERAL PURPOSE
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
JESD-30 code	O-PEDB-N2
JESD-609 code	e3
Humidity sensitivity level	1
Maximum non-repetitive peak forward current	500 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-50 °C
Maximum output current	50 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	DISK BUTTON
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	400 V
Maximum reverse recovery time	3 µs
surface mount	YES
Terminal surface	PURE TIN
Terminal form	NO LEAD
Terminal location	END
Base Number Matches	1

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AR(S)50 SERIES

50.0 AMPS. High Current Button Rectifiers

ARS

Features

Plastic material used carries Underwriters

Laboratory Classification 94V-0

Low cost construction utilizing void-free molded

plastic technique

Low cost

Diffused junction

Low leakage

High surge capability

High temperature soldering guaranteed:

260 C for 10 seconds

Mechanical Data

Case: Molded plastic case

Terminals:

Pure tin plated, lead free.

, solderable

per MIL-STD-202, Method 208

Polarity: Color ring denotes cathode

Weight: 0.07 ounce, 1.8 grams

Mounting position: Any

Dimensions in inches and (millimeters)

Rating at 25

C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

ARS

50A

ARS

50B

Maximum Ratings and Electrical Characteristic

Type Number

Maximum Recurrent Peak Revere Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

@Tc = 135

Peak Forward Surge Current, 8.3 ms Single

Half Sine-wave Superimposed on Rated

Load (JEDEC method ) at T

=150 C

aximum

nstantaneous

orward

oltage

50A

Maximum DC Reverse Current @ Tc=25 C

at Rated DC Blocking Voltage @ Tc=125

Typical Reverse Recovery Time (Note 2)

Typical Junction Capacitance ( Note 1 )

=25

Typical Thermal Resistance ( Note 3 )

perating and

Storage Temperature Range

Symbol

RRM

RMS

(AV)

FSM

Trr

θJC

, T

STG

ARS

50D

ARS

50G

ARS

50J

ARS

50K

ARS

50M

Units

100

200

140

200

400

280

400

500

1.1

5.0

250

3.0

300

600

420

600

800

560

800

1000

700

1000

1.0

-50 to +175

C/W

Notes:

1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.

2. Reverse Recovery Test Conditions: I

=0.5A, I

=1.0A, I

=0.25A

3. Thermal Resistance from Junction to Case, Singe Side Cooled.

Version: A06

ARS50G Related Products

	ARS50G	AR50	AR50M
Description	50 A, 400 V, SILICON, RECTIFIER DIODE	50 A, 50 V, SILICON, RECTIFIER DIODE	50 A, 1000 V, SILICON, RECTIFIER DIODE
Is it Rohs certified?	conform to	-	conform to
Maker	Taiwan Semiconductor	-	Taiwan Semiconductor
package instruction	O-PEDB-N2	-	O-PEDB-N2
Reach Compliance Code	compli	-	compli
Other features	LOW LEAKAGE CURRENT	-	LOW LEAKAGE CURRENT
application	GENERAL PURPOSE	-	GENERAL PURPOSE
Configuration	SINGLE	-	SINGLE
Diode component materials	SILICON	-	SILICON
Diode type	RECTIFIER DIODE	-	RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V	-	1.1 V
JESD-30 code	O-PEDB-N2	-	O-PEDB-N2
JESD-609 code	e3	-	e3
Humidity sensitivity level	1	-	1
Maximum non-repetitive peak forward current	500 A	-	500 A
Number of components	1	-	1
Phase	1	-	1
Number of terminals	2	-	2
Maximum operating temperature	175 °C	-	175 °C
Minimum operating temperature	-50 °C	-	-50 °C
Maximum output current	50 A	-	50 A
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY
Package shape	ROUND	-	ROUND
Package form	DISK BUTTON	-	DISK BUTTON
Certification status	Not Qualified	-	Not Qualified
Maximum repetitive peak reverse voltage	400 V	-	1000 V
Maximum reverse recovery time	3 µs	-	3 µs
surface mount	YES	-	YES
Terminal surface	PURE TIN	-	PURE TIN
Terminal form	NO LEAD	-	NO LEAD
Terminal location	END	-	END

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