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6A40GHR0

Description
Rectifiers 6A,400V,STD.GLASS PASSIVATED RECTIFIER
CategoryDiscrete semiconductor    diode   
File Size191KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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6A40GHR0 Overview

Rectifiers 6A,400V,STD.GLASS PASSIVATED RECTIFIER

6A40GHR0 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
package instructionO-PALF-W2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY, LOW POWER LOSS
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeO-PALF-W2
JESD-609 codee3
Maximum non-repetitive peak forward current250 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current6 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage400 V
Maximum reverse current10 µA
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
6A05G thru 6A100G
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Glass passivated chip junction
- High current capability, Low VF
- High reliability
- High surge current capability
- Low power loss
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Glass Passivated Rectifiers
MECHANICAL DATA
Case:
R-6
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Weight:
1.65 g (approximately)
R-6
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@6A
Maximum reverse current @ rated VR
Typical junction capacitance (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse Test with PW=300μs, 1% Duty Cycle
Note 2: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
T
J
=25
T
J
=125
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Cj
R
θjA
T
J
T
STG
1.1
10
100
60
35
- 55 to +150
- 55 to +150
O
6A
05G
50
35
50
6A
10G
100
70
100
6A
20G
200
140
200
6A
40G
400
280
400
6
250
6A
60G
600
420
600
6A
80G
800
560
800
6A
100G
1000
700
1000
UNIT
V
V
V
A
A
1.0
V
μA
pF
C/W
O
O
C
C
Document Number: DS_D1405025
Version: E14
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