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MUR4100C1

Description
Rectifier Diode, 1 Phase, 1 Element, 4A, 1000V V(RRM), Silicon, DO-201AD, DO-27, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size468KB,4 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Environmental Compliance
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
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MUR4100C1 Overview

Rectifier Diode, 1 Phase, 1 Element, 4A, 1000V V(RRM), Silicon, DO-201AD, DO-27, 2 PIN

MUR4100C1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerYangzhou Yangjie Electronic Technology Co., Ltd.
package instructionO-PALF-W2
Reach Compliance Codecompli
Other featuresFREE WHEELING DIODE, LOW LEAKAGE CURRENT
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.85 V
JEDEC-95 codeDO-201AD
JESD-30 codeO-PALF-W2
JESD-609 codee3
Maximum non-repetitive peak forward current125 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current4 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage1000 V
Maximum reverse current5 µA
Maximum reverse recovery time0.075 µs
surface mountNO
Terminal surfaceTin (Sn)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED

MUR4100C1 Preview

Download Datasheet
MUR420 THRU MUR4100
Super Fast Rectifier
Features
● Ultrafast reverse recovery time
● Low leakage current
● Low switching losses, high efficiency
● High forward surge capability
● Glass passivated chip junction
● Solder dip 275 ° max. 7 s, per JESD 22-B106
C
RoHS
COMPLIANT
Typical Applications
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters
for consumer, computer and telecommunication.
Mechanical Data
Package:
DO-201AD(DO-27)
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant
Terminals:
Tin plated leads, solderable per
J-STD-002 and JESD22-B102
Polarity:
Color band denotes the cathode end
Maximum Ratings
(Ta=25℃ Unless otherwise specified)
PARAMETER
Device marking code
Repetitive Peak Reverse Voltage
Average Forward Current
@60Hz sine wave, Resistance load, Ta =50℃
Forward Surge Current (Non-repetitive)
@60Hz Half-sine wave,1 cycle, Ta=25℃
Storage Temperature
Junction Temperature
V
RRM
I
F(AV)
V
A
SYMBOL
UNIT
MUR420
MUR420
200
MUR440
MUR440
400
MUR460
MUR460
600
4.0
MUR480
MUR480
800
MUR4100
MUR4100
1000
I
FSM
Tstg
Tj
A
125
-55 ~+150
-55~+150
Electrical Characteristics
(Ta=25℃ Unless otherwise specified)
PARAMETER
Maximum instantaneous
forward voltage drop per diode
Maximum DC reverse current
at rated DC blocking voltage
per diode
SYMBOL
VF
UNIT
V
TEST CONDITIONS
I
FM
=4.0A
Ta=25℃
IR
μA
Ta=100℃
t
rr
ns
I
F
=0.5A I
R
=1A
I
RR
=0.25A
Measured at 1MHZ
and Applied Reverse
Voltage of 4.0 V.D.C.
25
150
50
75
MUR420
0.89
MUR440
1.28
5
MUR460
MUR480 MUR4100
1.85
Reverse Recovery time
Typical junction capacitance
Cj
pF
70
1/4
S-A114
Rev.2.2, 28-Apr-14
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
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