DBL157GHC1G datasheet, PDF - EEWORLD Datasheet

DBL157GHC1G: DescriptionBridge Rectifiers 1.5A,1000V,GLASS PASSIVATED,DIP,LOW PROFILE,BRIDGE RECT.BRIDGE RECT.; CategoryDiscrete semiconductor diode; File Size177KB，4 Pages; ManufacturerTaiwan Semiconductor; Websitehttp://www.taiwansemi.com/

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Bridge Rectifiers 1.5A,1000V,GLASS PASSIVATED,DIP,LOW PROFILE,BRIDGE RECT.BRIDGE RECT.

Parameter Name	Attribute value
package instruction	R-PDIP-T4
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	UL RECOGNIZED
Minimum breakdown voltage	1000 V
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
JESD-30 code	R-PDIP-T4
Maximum non-repetitive peak forward current	50 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	1.5 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Guideline	AEC-Q101
Maximum repetitive peak reverse voltage	1000 V
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	DUAL
Base Number Matches	1

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