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BS107_04

Description
250 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA
Categorysemiconductor    Discrete semiconductor   
File Size58KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BS107_04 Overview

250 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA

BS107_04 Parametric

Parameter NameAttribute value
Number of terminals3
Minimum breakdown voltage200 V
Processing package description铅 FREE, CASE 29-11, TO-92, 3 PIN
Lead-freeYes
stateACTIVE
packaging shaperound
Package Sizecylindrical
Terminal formTHROUGH-hole
terminal coatingtin silver copper
Terminal locationBOTTOM
Packaging MaterialsPlastic/Epoxy
structureSingle WITH BUILT-IN diode
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Maximum ambient power consumption0.3500 W
Channel typeN channel
field effect transistor technologyMetal-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeUniversal small signal
Maximum leakage current0.2500 A
Maximum drain on-resistance6.4 ohm

BS107_04 Related Products

BS107_04 BS107RLRA BS107ARLRM BS107ARLRP BS107RL1
Description 250 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA 250 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA 250 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA 250 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA 250 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA
Number of terminals 3 3 3 3 3
Terminal form THROUGH-hole THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Number of components 1 1 1 1 1
transistor applications switch SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials silicon SILICON SILICON SILICON SILICON
Is it Rohs certified? - incompatible incompatible incompatible incompatible
Maker - ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor
Parts packaging code - TO-92 TO-92 TO-92 TO-92
package instruction - CYLINDRICAL, O-PBCY-T3 CASE 29-11, TO-92, 3 PIN CASE 29-11, TO-92, 3 PIN CYLINDRICAL, O-PBCY-T3
Contacts - 3 3 3 3
Manufacturer packaging code - CASE 29-11 CASE 29-11 CASE 29-11 CASE 29-11
Reach Compliance Code - _compli _compli _compli _compli
ECCN code - EAR99 EAR99 EAR99 EAR99
Configuration - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage - 200 V 200 V 200 V 200 V
Maximum drain current (Abs) (ID) - 0.13 A 0.25 A 0.25 A 0.25 A
Maximum drain current (ID) - 0.25 A 0.25 A 0.25 A 0.25 A
Maximum drain-source on-resistance - 14 Ω 6.4 Ω 6.4 Ω 14 Ω
FET technology - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code - TO-226AA TO-226AA TO-226AA TO-226AA
JESD-30 code - O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
JESD-609 code - e0 e0 e0 e0
Operating mode - ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature - 150 °C 150 °C 150 °C 150 °C
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - ROUND ROUND ROUND ROUND
Package form - CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type - N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) - 1 W 0.35 W 0.6 W 0.35 W
Certification status - Not Qualified Not Qualified Not Qualified Not Qualified
surface mount - NO NO NO NO
Terminal surface - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED

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