DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D252
BGD804
860 MHz, 20 dB gain power
doubler amplifier
Product specification
Supersedes data of 1999 Mar 26
2001 Nov 01
NXP Semiconductors
Product specification
860 MHz, 20 dB gain power doubler
amplifier
FEATURES
Excellent linearity
Extremely low noise
Silicon nitride passivation
Rugged construction
Gold metallization ensures
excellent reliability.
APPLICATIONS
CATV systems in the 40 to 860 MHz
frequency range.
DESCRIPTION
Hybrid amplifier module in a
SOT115J package operating at a
voltage supply of 24 V (DC).
QUICK REFERENCE DATA
SYMBOL
G
p
I
tot
PARAMETER
power gain
total current consumption (DC)
f = 50 MHz
f = 860 MHz
V
B
= 24 V
CONDITIONS
MIN.
19.5
20
PINNING - SOT115J
PIN
1
2
3
5
7
8
9
DESCRIPTION
input
common
common
+V
B
common
common
output
Side view
alfpage
BGD804
PIN CONFIGURATION
1
2
3
5
7
8
9
MSA319
Fig.1 Simplified outline.
MAX.
20.5
410
UNIT
dB
dB
mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
i
T
stg
T
mb
V
B
RF input voltage
storage temperature
operating mounting base temperature
supply voltage
PARAMETER
40
20
MIN.
MAX.
65
+100
+100
25
UNIT
dBmV
C
C
V
2001 Nov 01
2
NXP Semiconductors
Product specification
860 MHz, 20 dB gain power doubler
amplifier
CHARACTERISTICS
Table 1
Bandwidth 40 to 860 MHz; V
B
= 24 V; T
case
= 35
C;
Z
S
= Z
L
= 75
PARAMETER
power gain
slope cable equivalent
flatness of frequency response
input return losses
CONDITIONS
f = 50 MHz
f = 860 MHz
SL
FL
S
11
f = 40 to 860 MHz
f = 40 to 860 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 640 MHz
f = 640 to 860 MHz
S
22
output return losses
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 640 MHz
f = 640 to 860 MHz
S
21
CTB
X
mod
CSO
d
2
V
o
F
phase response
composite triple beat
cross modulation
composite second order distortion
second order distortion
output voltage
noise figure
f = 50 MHz
49 channels flat; V
o
= 47 dBmV;
measured at 859.25 MHz
49 channels flat; V
o
= 47 dBmV;
measured at 55.25 MHz
49 channels flat; V
o
= 47 dBmV;
measured at 860.5 MHz
note 1
d
im
=
60
dB; note 2
f = 50 MHz
f = 550 MHz
f = 650 MHz
f = 750 MHz
f = 860 MHz
I
tot
Notes
1. f
p
= 55.25 MHz; V
p
= 44 dBmV;
f
q
= 805.25 MHz; V
q
= 44 dBmV;
measured at f
p
+ f
q
= 860.5 MHz.
2. Measured according to DIN45004B;
f
p
= 851.25 MHz; V
p
= V
o
;
f
q
= 858.25 MHz; V
q
= V
o
6
dB;
f
r
= 860.25 MHz; V
r
= V
o
6
dB;
measured at f
p
+ f
q
f
r
= 849.25 MHz.
3. The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
total current consumption (DC)
note 3
MIN.
19.5
20
0.2
20
18.5
17
15.5
14
20
18.5
17
15.5
14
45
+60
TYP.
20
21
1.1
0.2
28
23
20
20
20
28.5
28
24
19
19
64
65.5
63
73
61.5
4.5
6.5
395
BGD804
SYMBOL
G
p
MAX.
20.5
2
0.5
+45
61
62
58
67
5
6
6
6.5
7.5
410
UNIT
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
dB
dB
dB
dBmV
dB
dB
dB
dB
dB
mA
2001 Nov 01
3
NXP Semiconductors
Product specification
860 MHz, 20 dB gain power doubler
amplifier
Table 2
Bandwidth 40 to 860 MHz; V
B
= 24 V; T
case
= 35
C;
Z
S
= Z
L
= 75
PARAMETER
power gain
slope cable equivalent
flatness of frequency response
input return losses
CONDITIONS
f = 50 MHz
f = 860 MHz
SL
FL
S
11
f = 40 to 860 MHz
f = 40 to 860 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 640 MHz
f = 640 to 860 MHz
S
22
output return losses
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 640 MHz
f = 640 to 860 MHz
S
21
CTB
X
mod
CSO
d
2
V
o
F
I
tot
Notes
1. f
p
= 55.25 MHz; V
p
= 44 dBmV;
f
q
= 805.25 MHz; V
q
= 44 dBmV;
measured at f
p
+ f
q
= 860.5 MHz.
2. Measured according to DIN45004B;
f
p
= 851.25 MHz; V
p
= V
o
;
f
q
= 858.25 MHz; V
q
= V
o
6
dB;
f
r
= 860.25 MHz; V
r
= V
o
6
dB;
measured at f
p
+ f
q
f
r
= 849.25 MHz.
3. The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
phase response
composite triple beat
cross modulation
f = 50 MHz
129 channels flat; V
o
= 44 dBmV;
measured at 859.25 MHz
129 channels flat; V
o
= 44 dBmV;
measured at 55.25 MHz
MIN.
19.5
20
0.2
20
18.5
17
15.5
14
20
18.5
17
15.5
14
45
+60
TYP.
20
21
1.1
0.2
28
23
20
20
20
28.5
28
24
19
19
54
62
60.5
73
61.5
395
BGD804
SYMBOL
G
p
MAX.
20.5
2
0.5
+45
53
61
54
67
410
UNIT
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
dB
dB
dB
dBmV
dB
mA
composite second order distortion 129 channels flat; V
o
= 44 dBmV;
measured at 860.5 MHz
second order distortion
output voltage
noise figure
total current consumption (DC)
note 1
d
im
=
60
dB; note 2
see Table 1
note 3
2001 Nov 01
4
NXP Semiconductors
Product specification
860 MHz, 20 dB gain power doubler
amplifier
Table 3
Bandwidth 40 to 750 MHz; V
B
= 24 V; T
case
= 35
C;
Z
S
= Z
L
= 75
PARAMETER
power gain
slope cable equivalent
flatness of frequency response
input return losses
CONDITIONS
f = 50 MHz
f = 750 MHz
SL
FL
S
11
f = 40 to 750 MHz
f = 40 to 750 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 640 MHz
f = 640 to 750 MHz
S
22
output return losses
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 640 MHz
f = 640 to 750 MHz
S
21
CTB
X
mod
CSO
d
2
V
o
F
I
tot
Notes
1. f
p
= 55.25 MHz; V
p
= 44 dBmV;
f
q
= 691.25 MHz; V
q
= 44 dBmV;
measured at f
p
+ f
q
= 746.5 MHz.
2. Measured according to DIN45004B;
f
p
= 740.25 MHz; V
p
= V
o
;
f
q
= 747.25 MHz; V
q
= V
o
6
dB;
f
r
= 749.25 MHz; V
r
= V
o
6
dB;
measured at f
p
+ f
q
f
r
= 738.25 MHz.
3. The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
phase response
composite triple beat
cross modulation
f = 50 MHz
110 channels flat; V
o
= 44 dBmV;
measured at 745.25 MHz
110 channels flat; V
o
= 44 dBmV;
measured at 55.25 MHz
MIN.
19.5
20
0.2
20
18.5
17
15.5
14
20
18.5
17
15.5
14
45
63
TYP.
20
20.8
28
23
20
20
20
28.5
28
24
19
19
59
64
62
395
BGD804
SYMBOL
G
p
MAX.
20.5
2
0.45
+45
57
62
56
68
410
UNIT
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
dB
dB
dB
dBmV
dB
mA
composite second order distortion 110 channels flat; V
o
= 44 dBmV;
measured at 746.5 MHz
second order distortion
output voltage
noise figure
total current consumption (DC)
note 1
d
im
=
60
dB; note 2
see Table 1
note 3
2001 Nov 01
5
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