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MBRF750HC0

Description
Schottky Diodes & Rectifiers 7A,50V,SINGLE SCHOTTKY RECTIFIER, ISOLATED
CategoryDiscrete semiconductor    diode   
File Size207KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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MBRF750HC0 Overview

Schottky Diodes & Rectifiers 7A,50V,SINGLE SCHOTTKY RECTIFIER, ISOLATED

MBRF750HC0 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
package instructionR-PSFM-T2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOW POWER LOSS, UL RECOGNIZED
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.75 V
JEDEC-95 codeTO-220AC
JESD-30 codeR-PSFM-T2
Maximum non-repetitive peak forward current150 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current7.5 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage50 V
Maximum reverse current100 µA
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
MBRF735 - MBRF7150
Taiwan Semiconductor
CREAT BY ART
7A, 35V - 150V Isolated Schottky Barrier Rectifiers
FEATURES
- Low power loss, high efficiency
- Guard ring for over-voltage protection
- High surge current capability
- UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
1
2
MECHANICAL DATA
Case:
ITO-220AC
Molding compound: UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
As marked
Mounting torque:
0.56 Nm max.
Weight:
1.7 g (approximately)
ITO-220AC
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak repetitive forward current
(Rated V
R
, Square wave, 20KHz)
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load
Peak repetitive reverse surge current (Note 1)
Maximum instantaneous forward voltage (Note 2)
I
F
=7.5A, T
J
=25°C
I
F
=7.5A, T
J
=125°C
I
F
=15A, T
J
=25°C
I
F
=15A, T
J
=125°C
Maximum reverse current @ rated V
R
Voltage rate of change (Rated V
R
)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: tp = 2.0
μs,
1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
T
J
=25°C
T
J
=125°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FRM
I
FSM
I
RRM
1.0
-
V
F
0.57
0.84
0.72
I
R
dV/dt
R
θJC
T
J
T
STG
15
0.75
0.65
-
-
0.1
10
10000
7
- 55 to +150
- 55 to +175
5
MBRF MBRF MBRF MBRF MBRF MBRF MBRF
735
35
24
35
745
45
31
45
750
50
35
50
760
60
42
60
7.5
15
150
0.5
0.92
0.82
-
-
1.02
0.92
-
-
mA
V/μs
°C/W
°C
°C
V
790
90
63
90
7100
100
70
100
7150
150
105
150
UNIT
V
V
V
A
A
A
A
Version: J1512

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Configuration SINGLE SINGLE - Single Single Single - Single
Product Attribute - - Attribute Value Attribute Value Attribute Value Attribute Value Attribute Value Attribute Value
Manufacturer - - Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor
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