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NESG3032M14-EVNF24

Description
RF Bipolar Transistors Silicon Germanium Amp and Oscillator
Categorysemiconductor    Discrete semiconductor   
File Size186KB,6 Pages
ManufacturerCEL
Websitehttp://www.cel.com/
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NESG3032M14-EVNF24 Overview

RF Bipolar Transistors Silicon Germanium Amp and Oscillator

NESG3032M14-EVNF24 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerCEL
Product CategoryRF Bipolar Transistors
RoHSN
Transistor TypeBipolar
TechnologySiGe
PackagingBox
TypeRF Silicon Germanium
Factory Pack Quantity1
NPN SILICON GERMANIUM RF TRANSISTOR
NESG3032M14
NPN SiGe RF TRANSISTOR FOR
LOW NOISE, HIGH-GAIN AMPLIFICATION
4-PIN LEAD-LESS MINIMOLD (M14, 1208 PACKAGE)
FEATURES
• The device is an ideal choice for low noise, high-gain amplification
NF = 0.6 dB TYP. @ V
CE
= 2 V, I
C
= 6 mA, f = 2.0 GHz
• Maximum stable power gain: MSG = 20.5 dB TYP. @ V
CE
= 2 V, I
C
= 15 mA, f = 2.0 GHz
• SiGe HBT technology (UHS3) adopted: f
max
= 110 GHz
• 4-pin lead-less minimold (M14, 1208 package)
ORDERING INFORMATION
Part Number
NESG3032M14
Order Number
NESG3032M14-A
Package
4-pin lead-less minimold
(M14, 1208 package)
NESG3032M14-T3 NESG3032M14-T3-A
(Pb-Free)
Quantity
50 pcs
(Non reel)
10 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 1 (Collector), Pin 4 (Emitter) face the
perforation side of the tape
Remark
To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
12.0
4.3
1.5
35
150
150
−65
to +150
Unit
V
V
V
mA
mW
°C
°C
T
j
T
stg
Note
Mounted on 1.08 cm
2
×
1.0 mm (t) glass epoxy PWB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Document No. PU10575EJ01V0DS (1st edition)
Date Published July 2005 CP(K)
©
NEC Compound Semiconductor Devices, Ltd. 2005
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