Data Sheet
Schottky barrier diode
RSX1001T3
Applications
Switching power supply
Dimensions
(Unit : mm)
Structure
Features
1) Cathode common type.
(TO-220)
2) Low I
R
3) High reliability
Construction
Silicon epitaxial planer
(1) (2) (3)
Absolute
maximum ratings
(Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
Forward current surge peak (60Hz / 1cyc) (*1)
Junction temperature
Storage temperature
Symbol
V
RM
V
R
Io
I
FSM
Tj
Tstg
Limits
30
30
10
150
150
40
to
150
Unit
V
V
A
A
C
C
(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=132C
Electrical
characteristic
(Ta=25°C)
Parameter
Forward voltage
Reverse current
Reverse recovery time
Symbol
V
F
I
R
jc
Min.
-
-
-
Typ.
-
-
-
Max.
0.45
500
2.5
Unit
V
A
C/W
Conditions
I
F
=5A
V
R
=30V
junction to case
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1/3
2011.05 - Rev.B
RSX1001T3
Electrical
characteristic curves
10
Ta=150℃
1000000
Data Sheet
Ta=150℃
10000
f=1MHz
REVERSE CURRENT:I
R
(uA)
FORWARD CURRENT:I
F
(A)
1
Ta=25℃
Ta=75℃
Ta=-25℃
10000
1000
Ta=75℃
Ta=25℃
100
10
1
Ta=-25℃
0.1
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
30
Ta=125℃
100000
Ta=125℃
1000
100
0.01
0
100
200
300
400
500
600
FORWARD VOLTAGE : V
F
(mV)
V
F
-I
F
CHARACTERISTICS
10
0
5
10
15
20
25
0
5
10
15
20
25
30
REVERSE VOLTAGE : V
R
(V)
V
R
-I
R
CHARACTERISTICS
REVERSE VOLTAGE : V
R
(V)
V
R
-Ct CHARACTERISTICS
420
FORWARD VOLTAGE:V
F
(mV)
REVERSE CURRENT:I
R
(uA)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
410
Ta=25℃
I
F
=5A
n=30pcs
500
450
400
350
300
250
200
150
100
50
0
AVE:148.6uA
1100
Ta=25℃
V
R
=30V
n=30pcs
1080
1060
1040
1020
1000
980
960
940
920
900
I
R
DISPERSION MAP
Ct DISPERSION MAP
AVE:1006.7pF
Ta=25℃
f=1MHz
V
R
=0V
n=10pcs
400
390
380
AVE:402.0mV
370
V
F
DISPERSION MAP
300
250
200
150
100
50
AVE:235.0A
0
I
FSM
DISPERSION MAP
Ifsm
1cyc
8.3ms
30
1000
Ta=25℃
I
F
=0.5A
I
R
=1A
Irr=0.25*I
R
n=10pcs
Ifsm
REVERSE RECOVERY TIME:trr(ns)
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
25
20
15
10
5
AVE:17.2ns
0
trr DISPERSION MAP
8.3ms
100
8.3ms
1cyc
10
1
1
10
NUMBER OF CYCLES
I
FSM
-CYCLE CHARACTERISTICS
100
1000
100
Ifsm
t
10
IM=100mA
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
I
F
=5A
8
DC
Sin(θ=180)
D=1/2
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
10
300us
Rth(j-a)
FORWARD POWER
DISSIPATION:Pf(W)
1ms
time
6
100
4
1
Rth(j-c)
2
10
1
10
TIME:t(ms)
I
FSM
-t CHARACTERISTICS
100
0.1
0.001
0
0.01
0.1
1
10
100
1000
0
5
10
15
20
TIME:t(s)
Rth-t CHARACTERISTICS
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
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2/3
2011.05 - Rev.B
RSX1001T3
Data Sheet
10
30
0A
Io
30
0A
Io
t
20
DC
T
V
R
D=t/T
V
R
=15V
Tj=150℃
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
REVERSE POWER
DISSIPATION:P
R
(W)
t
20
DC
D=1/2
10
Sin(θ=180)
T
6
DC
4
Sin(θ=180)
2
D=1/2
D=t/T
V
R
=15V
Tj=150℃
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
8
0V
V
R
0V
D=1/2
10
Sin(θ=180)
0
0
0
5
10
15
20
25
30
REVERSE VOLTAGE : V
R
(V)
V
R
-P
R
CHARACTERISTICS
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE:Ta(℃)
Derating Curve"(Io-Ta)
0
25
50
75
100
125
150
CASE TEMPARATURE:Tc(℃)
Derating Curve"(Io-Tc)
30
No break at 30kV
25
No break at 30kV
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
20
15
10
5
0
C=200pF
R=0
ESD DISPERSION MAP
C=100pF
R=1.5k
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3/3
2011.05 - Rev.B
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