R
EM MICROELECTRONIC
- MARIN SA
EM4150
EM4350
1 KBit READ / WRITE
CONTACTLESS IDENTIFICATION DEVICE
Description
The EM4150/EM4350 (previously named P4150/P4350)
is a CMOS integrated circuit intended for use in electronic
Read/Write RF Transponders. The chip contains 1 KBit of
EEPROM which can be configured by the user, allowing a
write inhibited area, a read protected area, and a read
area output continuously at power on. The memory can
be secured by using the 32 bit password for all write and
read protected operations. The password can be updated,
but never read. The fixed code serial number and device
identification are laser programmed making every chip
unique.
The EM4150 will transmit data to the transceiver by
modulating the amplitude of the electromagnetic field, and
receive data and commands in a similar way. Simple
commands will enable write to EEPROM, to update the
password, to read a specific memory area, and to reset
the logic.
The coil of the tuned circuit is the only external component
required, all remaining functions are integrated in the chip.
The only difference between EM4150 and EM4350 is that
EM4150 comes with standard sized pads, whereas
EM4350 comes with oversized (mega) pads, ideal for use
with bumps on die (Fig. 27).
Features
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1 KBit of EEPROM organized in 32 words of 32 bits
32 bit Device Serial Number (Read Only Laser ROM)
32 bit Device Identification (Read Only Laser ROM)
Power-On Reset sequence
Power Check for EEPROM write operation
User defined Read Memory Area at Power On
User defined Write Inhibited Memory Area
User defined Read Protected Memory Area
Data Transmission performed by Amplitude
Modulation
Two Data Rate Options 2 KBd (Opt64) or 4 KBd
(Opt32)
Bit Period = 64 or 32 periods of field frequency
170 pF ± 2% on chip Resonant Capacitor
-40 to +85°C Temperature range
100 to 150 kHz Field Frequency range
On chip Rectifier and Voltage Limiter
No external supply buffer capacitance needed due to
low power consumption
Ticketing
Automotive Immobilizer with rolling code
High Security Hands Free Access Control
Industrial automation with portable database
Manufacturing automation
Prepayment Devices
Applications
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Typical Operating Configuration
Pin Assignment
Coil 2
L
COIL2
COIL2
EM4150
Coil 1
COIL1
COIL1
EM4150
COIL 1
COIL 2
Typical value of inductance at 125 KHz is 9.5 mH
Fig. 1
Coil terminal / Clock input
Coil terminal
Fig. 2
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EM4150
EM4350
Absolute Maximum Ratings
Parameter
Maximum AC peak current
induced on COIL1 and COIL2
Power Supply
Maximum voltage other pads
Minimum voltage other pads
Storage temperature
Electrostatic discharge
maximum to MIL-STD-883C
method 3015
Symbol
I
COIL
V
DD
V
max
V
min
T
store
V
ESD
Conditions
±
30 mA
-0.3 to 6.0V
V
DD
+ 0.3V
V
SS
– 0.3V
-55 to °125°C
1000V
Handling Procedures
This device has built-in protection against high static
voltages or electric fields; however, anti-static
precautions should be taken as for any other CMOS
component.
Unless otherwise specified, proper operation can only
occur when all terminal voltages are kept within the
supply voltage range.
Operating Conditions
Parameter
Operating
temperature
Maximum coil
current
AC Voltage on
coil
Supply frequency
Symbol
T
op
I
COIL
V
coil
f
coil
100
1)
150
Min
-40
Typ
Max
+85
10
Units
°C
mA
Vpp
kHz
Stresses above these listed maximum ratings may cause
permanent damage to the device. Exposure beyond
specified operating conditions may affect device reliability
or cause malfunction.
Note 1): Maximum voltage is defined by forcing 10mA on Coil1-
Coil2
Tranceiver
Data to be sent
to transponder
Modulator
Transponder
Coil1
Oscillator
Antenna
Driver
EM4150
Coil2
Filter
and
Gain
Demodulator
Data decoder
Data received
from transponder
READ MODE
Signal on
Transponder coil
RECEIVE MODE
Signal on
Transceiver coil
Signal on
Transceiver coil
Signal on
Transponder coil
RF Carrier
Data
RF Carrier
Data
Fig. 3
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EM4150
EM4350
Electrical Characteristics
V
DD
= 2.5V, V
SS
= 0V, f
coil
= 125 kHz Sine wave, V
coil
= 1V
pp
, T
op
= 25°C unless otherwise stated
Parameter
Symbol Test Conditions
Min
Supply voltage
V
DD
2.0
2.6
V
DDee
Minimum EEPROM write
voltage
Power Check EEPROM write
I
PWcheck
V
DD
= 3V
Supply current / read
Suppy current / write
Modulator ON voltage drop
Resonance Capacitor
Power On Reset level high
Clock extractor input min.
Clock extractor input max.
EEPROM data endurance
EEPROM retention
I
rd
I
wr
V
ON
C
r
V
prh
V
clkmin
V
clkmax
N
cy
T
ret
Read Mode
Write mode (V
DD
= 3V)
V
(COIL1–Vss)
and V
(COIL2-Vss)
I
coil
= 100µA
V
(COIL1–Vss)
and V
(COIL2-Vss)
I
coil
= 5mA
166.5
Rising Supply
Minimum voltage for Clock Extraction
Maximum voltage to detect modulation stop
Erase all / Write all at V
DD
= 5V
T
op
= 55°C after 100'000 cycles (Note 1)
1.0
50
100'000
10
170
2.0
Typ
Max
5.5
Units
V
V
µA
µA
µA
V
V
pF
V
V
pp
mV
pp
cycles
years
80
3.0
40
5.0
70
0.50
2.50
173.5
2.6
Note 1:
Based on 1000 hours at 150°C
Timing Characteristics
V
DD
= 2.5V, V
SS
= 0V, f
coil
= 125 kHz Sine wave, V
coil
= 1V
pp
, T
op
= 25°C unless otherwise stated
All timings are derived from the field frequency and are specified as a number of RF periods.
Parameters
Option : 64 clocks per bit
Read Bit Period
LIW/ACK/NACK pattern Duration
Read 1 Word Duration
Processing Pause Time
Write Access Time
Initialization Time
EEPROM write time
Option : 32 clocks per bit
Read Bit Period
LIW/ACK/NACK pattern Duration
Read 1 Word Duration
Processing Pause Time
Write Access Time
Initialization Time
EEPROM write time
Symbol
Opt64
trdb
tpatt
trdw
tpp
twa
tinit
twee
Opt32
trdb
tpatt
trdw
tpp
twa
tinit
twee
32
160
1600
32
32
1056
2624
RF periods
RF periods
RF periods
RF periods
RF periods
RF periods
RF periods
64
320
3200
64
64
2112
3200
RF periods
RF periods
RF periods
RF periods
RF periods
RF periods
RF periods
Test conditions
Value
Units
including LIW
VDD = 3 V
including LIW
VDD = 3 V
RF periods represent periods of the carrier frequency emitted by the transciever unit. For example, if 125 kHz is used :
The Read bit period (Opt64) would be : 1/125'000*64 = 512 µs, and the time to read 1 word : 1/125'000*3200 = 25.6 ms.
The Read bit period (Opt32) would be : 1/125'000*32 = 256 µs, and the time to read 1 word : 1/125'000*1600 = 12.8 ms.
ATTENTION
Due to amplitude modulation of the coil-signal, the clock-extractor may miss clocks or add spurious clocks close
to the edges of the RF-envelope. This desynchronisation will not be larger than ±3 clocks per bit and must be
taken into account when developing reader software.
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EM4150
EM4350
Block Diagram
Serial Data
Modulator
Encoder
ROM
+V
Coil 2
Cr
Voltage
Regulation
EEPROM
VDD
Coil 1
AC/DC
converte
r
GND
Cs
Power
Control
Reset
Write Enable
Clock
Extractor
Sequencer
Control
Logic
Data
Extractor
Command
Decoder
Fig. 4
Functional Description
General
The EM4150 is supplied by means of an electromagnetic
field induced on the attached coil. The AC voltage is
rectified in order to provide a DC internal supply voltage.
When the DC voltage crosses the Power-On level, the
chip enters the Standard Read Mode and sends data
continuously. The data to be sent in this mode is user
defined by storing the first and last addresses to be
output. When the last address is sent, the chip will
continue with the first address until the transceiver sends
a request. In the read mode, a Listen Window (LIW) is
generated before each word. During this time, the
EM4150 will turn to the Receive Mode (RM) if it receives
a valid RM pattern. The chip then expects a valid
command.
Mode of Operation
Power-On
Init
Standard
Read Mode
31
32
33
Memory Organisation
The 1024 bit EEPROM is organised in 32 words of 32
bits. The first three words are assigned to the Password,
the Protection word, and the Control word. In order to
write one of these three words, it is necessary to send
the valid password. At fabrication, the EM4150 comes
with all bits of the password programmed to a logic "0".
The Password cannot be read out. The memory contains
two extra words of Laser ROM. These words are laser
programmed during fabrication for every chip, are unique
and cannot be altered.
Memory Map
Bit 0
Word 0
1
2
PASSWORD
PROTECTION WORD
CONTROL WORD
928 Bits of USER
EEPROM
DEVICE SERIAL NUMBER
DEVICE IDENTIFICATION
Laser
Laser
Bit 31
EE
EE
EE
EE
Get Command
No
Receive
Mode
request ?
Yes
Execute Command
Login
Write Word
Write Password
Selective Read
Reset
Control Word
0 - 7 First Word Read
8 - 15 Last Word Read
16 Password Check On/Off
17 Read After Write On/Off
18 - 31 User available
Protection Word
0 - 7 First Word Read Protected
8 - 15 Last Word Read Protected
16 - 23 First Word Write Inhibited
24 - 31 Last Word Write Inhibited
Password
Write Only - NO Read Access
Device Identification Word &
Serial Number Word
Laser Programmed - Read Only
Send word
On means bit set to logic '1'
Off means bit set to logic '0'
Fig. 6
Fig. 5
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EM4150
EM4350
Standard Read Mode
After a Power-On Reset and upon completion of a
command, the chip will execute the Standard Read
Mode, in which it will send data continuously, word by
word from the memory section defined between the First
Word Read (FWR) and Last Word Read (LWR). When
the last word is output, the chip will continue with the first
word until the transceiver sends a request. If FWR and
LWR are the same, the same word will be sent
repetitively. The Listen Window (LIW) is generated
before each word to check if the transceiver is sending
data. The LIW has a duration of 320 (160 opt 32) periods
of the RF field. FWR and LWR have to be programmed
as valid addresses (FWR
≤
LWR and
≤
33).
The words sent by the EM4150 comprise 32 data bits
and parity bits. The parity bits are not stored in the
EEPROM, but generated while the message is sent as
described below. The parity is even for rows and
columns, meaning that the total number of "1's" is even
(including the parity bit).
Receive Mode
To activate the Receive Mode, the Transceiver sends to
the chip the RM pattern (while in the modulated phase of
a Listen Window LIW). The EM4150 will stop sending
data upon reception of a valid RM. The chip then expects
a command. The RM pattern consists of 2 bits "0" sent
by the transceiver. The first bit "0" transmitted is to be
detected during the 64 (32 opt 32) periods where the
modulation is "ON" in LIW.
OUTPUT
WORD n
LIW
INPUT
RM
COMMAND
RM : Two Consecutive bits set to logic "0"
Fig. 9
Commands
The commands are composed of nine bits : eight data
bits and one even parity bit (total amount of "ones" is
even including the parity bit).
COMMAND BITS
00000001 1
00010001 0
00010010 0
FUNCTION
LOGIN
WRITE PASSWORD
WRITE WORD
SELECTIVE READ MODE
RESET
Word Organisation (Words 0 to 32)
First bit output
Data
Row Even Parity
D0
D8
D16
D24
PC0
D1
D9
D17
D25
PC1
D2
D10
D18
D26
PC2
D3
D11
D19
D27
PC3
D4
D12
D20
D28
PC4
D5
D13
D21
D29
PC5
D6
D14
D22
D30
PC6
D7
D15
D23
D31
PC7
P0
P1
P2
P3
0
Column Even Parity
Last bit output
logic "0"
Fig. 7a
00001010 0
10000000 1
When a word is read protected, the output will consist of
45 bits set to logic "0". The password has to be used to
output correctly a read protected memory area.
Word Organisation (Word 33)
C0
ID2
R0
CK0
PC0
C1
C2
ID3 ID4
R1
R2
CK1 CK2
PC1 PC2
C3
C4
ID5 ID6
R3
R4
CK3 CK4
PC3 PC4
C5 ID0
ID7 ID8
R5
R6
CK5 CK6
PC5 PC6
ID1
ID9
R7
CK7
PC7
P0
P1
P2
P3
0
First bit
Received
Parity bit
Fig. 10
C0 - C5
: P4150 Code set to Hexadecimal 32
ID0 - ID9
: Version Code
R0 - R7 / CK0 - CK7 : EM reserved, and Check bits
Selective Read Mode
The Selective Read Mode is used to read other data than
that defined between FWR and LWR. To enter Selective
Read Mode, the Transceiver has to send during LIW a
Receive mode pattern (RM) to turn the EM4150 in
Receive Mode. Then the Selective Read Mode
Command is sent by the transceiver followed by the First
and Last addresses to be read. The FWR and LWR are
then replaced by the new addresses and the chip is
operating in the same way as the Standard Read Mode.
The control word is not modified by this command, and
the next standard read mode operation will work with
original FWR and LWR (Selected area is read once and
then the chip returns to Standard Read Mode).
To read words which are Read Protected, a Login
command has to be sent by the transceiver prior to the
Selective Read command. The Login command is to be
used only once for all subsequent commands requiring a
password.
Fig. 7b
Read Sequence
POR
INIT
OUTPUT
LIW LIW
FWR
LIW FWR+1
LWR LIW LIW
FWR
LIW
LIW
D0-D7
P0 D8-D15
P1 D16-D23 P2 D24-D31 P3 PC0-PC7
"0"
T0 periods :
32 32
128
16 16
64
1 bit - 64 T0 periods (Opt64)
32 T0 periods (Opt32)
64
32
64
32
(Opt64)
(Opt32)
Data
Coded Data
T0 = Period of RF carrier frequency
Fig. 8
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2004, EM Microelectronic-Marin SA
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