EN29LV640B-70TI datasheet, PDF

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EN29LV640B-70TI: Description64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only; Categorystorage storage; File Size486KB，53 Pages; ManufacturerEon; Websitehttp://www.essi.com.tw/

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EN29LV640B-70TI Overview

64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

EN29LV640B-70TI Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Eon
package instruction	TSSOP, TSSOP48,.8,20
Reach Compliance Code	unknow
Maximum access time	70 ns
Spare memory width	8
startup block	BOTTOM
command user interface	YES
Universal Flash Interface	YES
Data polling	YES
JESD-30 code	R-PDSO-G48
memory density	67108864 bi
Memory IC Type	FLASH
memory width	16
Number of departments/size	8,127
Number of terminals	48
word count	4194304 words
character code	4000000
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	4MX16
Package body material	PLASTIC/EPOXY
encapsulated code	TSSOP
Encapsulate equivalent code	TSSOP48,.8,20
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Parallel/Serial	PARALLEL
power supply	3/3.3 V
Certification status	Not Qualified
ready/busy	YES
Department size	8K,64K
Maximum standby current	0.000005 A
Maximum slew rate	0.03 mA
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
switch bit	YES
type	NOR TYPE

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EN29LV640T/B

64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory

Boot Sector Flash Memory, CMOS 3.0 Volt-only

FEATURES

•

Single power supply operation

- Full voltage range: 2.7 to 3.6 volts read and

write operations

•

High performance

- Access times as fast as 70 ns

•

Low power consumption (typical values at 5

MHz)

- 9 mA typical active read current

- 20 mA typical program/erase current

- Less than 1

μA

current in standby or automatic

sleep mode.

•

Standard DATA# polling and toggle bits

feature

•

Unlock Bypass Program command supported

•

Erase Suspend / Resume modes:

Read and program another Sector during

Erase Suspend Mode

•

Support JEDEC Common Flash Interface

(CFI).

•

Low Vcc write inhibit < 2.5V

•

Minimum 100K program/erase endurance

cycles.

•

RESET# hardware reset pin

- Hardware method to reset the device to read

mode.

•

WP#/ACC input pin

- Write Protect (WP#) function allows

protection of outermost two boot sectors,

regardless of sector protect status

- Acceleration (ACC) function provides

accelerated program times

•

Package Options

- 48-pin TSOP (Type 1)

- 48 ball 6mm x 8mm FBGA

•

Commercial and Industrial Temperature

Range.

•

Flexible Sector Architecture:

- Eight 8-Kbyte sectors, One hundred and

twenty-seven 32K-Word / 64K-byte sectors.

- 8-Kbyte sectors for Top or Bottom boot.

- Sector/Sector Group protection:

Hardware locking of sectors to prevent

program or erase operations within individual

sectors

Additionally, temporary Sector Group

Unprotect allows code changes in previously

locked sectors.

•

High performance program/erase speed

Word program time: 8µs typical

Sector erase time: 500ms typical

Chip erase time: 64s typical

•

JEDEC Standard compatible

GENERAL DESCRIPTION

The EN29LV640T/B is a 64-Megabit, electrically erasable, read/write non-volatile flash memory,

organized as 8,388,608 bytes or 4,194,304 words. Any word can be programmed typically in 8µs. The

EN29LV640T/B features 3.0V voltage read and write operation, with access times as fast as 70ns to

eliminate the need for WAIT states in high-performance microprocessor systems.

The EN29LV640T/B has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#)

controls, which eliminate bus contention issues. This device is designed to allow either single Sector

or full Chip erase operation, where each Sector can be individually protected against program/erase

operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K

program/erase cycles on each Sector.

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

Rev. B, Issue Date: 2007/05/16

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