PMDPB30XN
6 July 2012
20 V, dual N-channel Trench MOSFET
Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless
ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
•
Very fast switching
•
Trench MOSFET technology
•
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
•
Exposed drain pad for excellent thermal conduction
1.3 Applications
•
Charging switch for portable devices
•
DC-to-DC converters
•
Small brushless DC motor drive
•
Power management in battery-driven portables
•
Hard disc and computing power management
1.4 Quick reference data
Table 1.
Symbol
Per transistor
V
DS
V
GS
I
D
R
DSon
drain-source voltage
gate-source voltage
drain current
V
GS
= 4.5 V; T
amb
= 25 °C; t ≤ 5 s
V
GS
= 4.5 V; I
D
= 3 A; T
j
= 25 °C
[1]
Quick reference data
Parameter
Conditions
T
j
= 25 °C
Min
-
-12
-
Typ
-
-
-
Max
20
12
5.3
Unit
V
V
A
Static characteristics (per transistor)
drain-source on-state
resistance
[1]
2
-
32
40
mΩ
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm .
Nexperia
PMDPB30XN
20 V, dual N-channel Trench MOSFET
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
7
8
Pinning information
Symbol Description
S1
G1
D2
S2
G2
D1
D1
D2
source TR1
gate TR1
drain TR2
source TR2
gate TR2
drain TR1
drain TR1
drain TR2
1
2
3
G1 S1
S2 G2
017aaa254
Simplified outline
6
5
4
Graphic symbol
D1
D2
7
8
Transparent top view
DFN2020-6 (SOT1118)
3. Ordering information
Table 3.
Ordering information
Package
Name
PMDPB30XN
DFN2020-6
Description
plastic thermal enhanced ultra thin small outline package; no
leads; 6 terminals
Version
SOT1118
Type number
4. Marking
Table 4.
Marking codes
Marking code
1V
Type number
PMDPB30XN
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per transistor
V
DS
V
GS
I
D
drain-source voltage
gate-source voltage
drain current
V
GS
= 4.5 V; T
amb
= 25 °C; t ≤ 5 s
V
GS
= 4.5 V; T
amb
= 25 °C
V
GS
= 4.5 V; T
amb
= 100 °C
I
DM
PMDPB30XN
Parameter
Conditions
T
j
= 25 °C
Min
-
-12
[1]
[1]
[1]
Max
20
12
5.3
4
2.6
12
Unit
V
V
A
A
A
A
2 / 13
-
-
-
-
©
peak drain current
T
amb
= 25 °C; single pulse; t
p
≤ 10 µs
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
6 July 2012
Nexperia
PMDPB30XN
20 V, dual N-channel Trench MOSFET
Symbol
P
tot
Parameter
total power dissipation
Conditions
T
amb
= 25 °C
T
sp
= 25 °C
[2]
[1]
Min
-
-
-
Max
490
1170
8330
Unit
mW
mW
mW
Source-drain diode
I
S
Per device
T
j
T
amb
T
stg
junction temperature
ambient temperature
storage temperature
[1]
[2]
120
P
der
(%)
80
source current
T
amb
= 25 °C
[1]
-
1.2
A
-55
-55
-65
150
150
150
°C
°C
°C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm .
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
017aaa123
2
120
I
der
(%)
80
017aaa124
40
40
0
- 75
- 25
25
75
125
T
j
(°C)
175
0
- 75
- 25
25
75
125
T
j
(°C)
175
Fig. 1.
Normalized total power dissipation as a
function of junction temperature
Fig. 2.
Normalized continuous drain current as a
function of junction temperature
PMDPB30XN
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
6 July 2012
3 / 13
Nexperia
PMDPB30XN
20 V, dual N-channel Trench MOSFET
10
2
I
D
(A)
10
Limit R
DSon
= V
DS
/I
D
017aaa637
t
p
= 10 µs
t
p
= 100 µs
DC; T
sp
= 25 °C
t
p
= 10 ms
t
p
= 100 ms
1
10
-1
DC; T
amb
= 25 °C;
drain mounting pad 6 cm
2
10
-2
10
-1
1
10
V
DS
(V)
10
2
I
DM
= single pulse
Fig. 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
6. Thermal characteristics
Table 6.
Symbol
Per transistor
R
th(j-a)
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
[1]
[2]
Thermal characteristics
Parameter
Conditions
in free air
in free air; t ≤ 5 s
[1]
[2]
[2]
Min
-
-
-
-
Typ
223
93
55
10
Max
256
107
63
15
Unit
K/W
K/W
K/W
K/W
R
th(j-sp)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm .
2
PMDPB30XN
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
6 July 2012
4 / 13
Nexperia
PMDPB30XN
20 V, dual N-channel Trench MOSFET
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle = 1
0.75
0.33
0.2
0.05
0.02
0.01
1
0
0.5
0.25
0.1
10
017aaa398
10
-1
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig. 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle = 1
0.75
0.33
0.2
10
0.05
0.02
1
0.01
0
0.5
0.25
0.1
017aaa399
10
-1
10
-5
10
-4
10
-3
10
-2
2
10
-1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for drain 6 cm
Fig. 5.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7.
Symbol
V
(BR)DSS
V
GSth
I
DSS
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
Conditions
I
D
= 250 µA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 250 µA; V
DS
= V
GS
; T
j
= 25 °C
V
DS
= 20 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 20 V; V
GS
= 0 V; T
j
= 150 °C
PMDPB30XN
All information provided in this document is subject to legal disclaimers.
Min
20
0.4
-
-
Typ
-
0.65
-
-
©
Max
-
0.9
1
11
Unit
V
V
µA
µA
5 / 13
Static characteristics (per transistor)
Nexperia B.V. 2017. All rights reserved
Product data sheet
6 July 2012
京公网安备 11010802033920号
EEWORLD
