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DDTA114GE-7-F

Description
Bipolar Transistors - Pre-Biased 150MW 10K
CategoryDiscrete semiconductor    The transistor   
File Size144KB,5 Pages
ManufacturerDiodes Incorporated
Environmental Compliance
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DDTA114GE-7-F Overview

Bipolar Transistors - Pre-Biased 150MW 10K

DDTA114GE-7-F Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerDiodes Incorporated
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time19 weeks
Other featuresBUILT IN BIAS RESISTOR
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)30
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)0.15 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
DDTA
(R2-ONLY SERIES)
E
PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Complementary NPN Types Available (DDTC)
Built-In Biasing Resistor, R2 only
Lead Free/RoHS Compliant (Note 2)
"Green" Device (Note 3 and 4)
B
G
H
K
M
A
C
TOP VIEW
E
B C
SOT-523
Dim
A
B
C
D
N
NEW PRODUCT
Min
0.15
0.75
1.45
0.90
1.50
0.00
0.60
0.10
0.10
0.45
Max
0.30
0.85
1.75
1.10
1.70
0.10
0.80
0.30
0.20
0.65
Typ
0.22
0.80
1.60
0.50
1.00
1.60
0.05
0.75
0.22
0.12
0.50
Mechanical Data
Case: SOT-523
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
Terminal Connections: See Diagram
Marking & Date Code Information: See Diagrams &
Page 4
Ordering Information: See Page 4
Weight: 0.002 grams (approximate)
G
H
J
D
L
J
K
L
C
B
M
N
P/N
DDTA114GE
DDTA124GE
DDTA144GE
DDTA115GE
R2 (NOM)
10KΩ
22KΩ
47KΩ
100KΩ
MARKING
P26
P27
P28
P29
R
2
E
SCHEMATIC DIAGRAM
α
All Dimensions in mm
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
(Max)
P
d
(Note 1)
R
θ
JA
T
j
, T
STG
Value
-50
-50
-5
-100
150
833
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Thermal Resistance, Junction to Ambient Air
Operating and Storage Temperature Range
Notes:
1. Mounted on FR4 PC Board with recommended pad layout as shown on Diodes Inc., suggested pad layout document AP02001, which can be found on
our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30320 Rev. 6 - 2
1 of 4
www.diodes.com
DDTA (R2-ONLY SERIES) E
© Diodes Incorporated

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ECCN code EAR99 EAR99
JESD-609 code e3 e0
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Package form SMALL OUTLINE SIP
Terminal surface Matte Tin (Sn) Tin/Lead (Sn/Pb)
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