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AUIRFR4105ZTR

Description
MOSFET AUTO 55V 1 N-CH HEXFET 24.5mOhms
CategoryDiscrete semiconductor    The transistor   
File Size705KB,12 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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AUIRFR4105ZTR Overview

MOSFET AUTO 55V 1 N-CH HEXFET 24.5mOhms

AUIRFR4105ZTR Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionROHS COMPLIANT, PLASTIC, DPAK-3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresAVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas)29 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage55 V
Maximum drain current (Abs) (ID)30 A
Maximum drain current (ID)30 A
Maximum drain-source on-resistance0.0245 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252AA
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)48 W
Maximum pulsed drain current (IDM)120 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN OVER NICKEL
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
 
AUTOMOTIVE GRADE
AUIRFR4105Z
AUIRFU4105Z
HEXFET
®
Power MOSFET
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
 
V
DSS
R
DS(on)
I
D
D
55V
max.
24.5m
30A
D
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a wide
variety of other applications.
G
S
G
S
D
D-Pak
AUIRFR4105Z
I-Pak
AUIRFU4105Z
G
Gate
D
Drain
S
Source
Base part number
AUIRFU4105Z
AUIRFR4105Z 
Package Type
I-Pak
D-Pak
 
Standard Pack
Form
Quantity
Tube
75
Tube
75
Tape and Reel Left
3000
Orderable Part Number
AUIRFU4105Z
AUIRFR4105Z
AUIRFR4105ZTRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
E
AS
(Tested)
I
AR
E
AR
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
30
21
120
48
0.32
± 20
29
46
See Fig.15,16, 12a, 12b
-55 to + 175
300
 
Units
A
W
W/°C
V
mJ
A
mJ
°C 
 
Thermal Resistance
 
Symbol
R
JC
R
JA
R
JA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mount)
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
3.12
50
110
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification
standards can be found at
www.infineon.com
1
2015-12-1

AUIRFR4105ZTR Related Products

AUIRFR4105ZTR AUIRFR4105ZTRR AUIRFR4105ZTRL
Description MOSFET AUTO 55V 1 N-CH HEXFET 24.5mOhms MOSFET AUTO 55V 1 N-CH HEXFET 24.5mOhms MOSFET AUTO 55V 1 N-CH HEXFET 24.5mOhms
Is it Rohs certified? conform to conform to conform to
package instruction ROHS COMPLIANT, PLASTIC, DPAK-3 ROHS COMPLIANT, PLASTIC, DPAK-3 ROHS COMPLIANT, PLASTIC, DPAK-3
Reach Compliance Code compliant compliant compliant
ECCN code EAR99 EAR99 EAR99
Other features AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas) 29 mJ 29 mJ 29 mJ
Shell connection DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 55 V 55 V 55 V
Maximum drain current (Abs) (ID) 30 A 30 A 30 A
Maximum drain current (ID) 30 A 30 A 30 A
Maximum drain-source on-resistance 0.0245 Ω 0.0245 Ω 0.0245 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-252AA TO-252AA TO-252AA
JESD-30 code R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
JESD-609 code e3 e3 e3
Humidity sensitivity level 1 1 1
Number of components 1 1 1
Number of terminals 2 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 48 W 48 W 48 W
Maximum pulsed drain current (IDM) 120 A 120 A 120 A
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal surface MATTE TIN OVER NICKEL MATTE TIN OVER NICKEL Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal form GULL WING GULL WING GULL WING
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature 30 30 30
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Base Number Matches 1 1 1
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