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SAP09P

Description
BUILT-IN TEMPERATURE COMPENSATION DIODES
CategoryDiscrete semiconductor    The transistor   
File Size33KB,1 Pages
ManufacturerSANKEN
Websitehttp://www.sanken-ele.co.jp/en/
Download Datasheet Parametric View All

SAP09P Overview

BUILT-IN TEMPERATURE COMPENSATION DIODES

SAP09P Parametric

Parameter NameAttribute value
MakerSANKEN
Objectid1918990815
package instructionFLANGE MOUNT, R-PSFM-T5
Reach Compliance Codeunknow
ECCN codeEAR99
compound_id10917771
Maximum collector current (IC)10 A
Collector-emitter maximum voltage150 V
ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)5000
JESD-30 codeR-PSFM-T5
Number of components1
Number of terminals5
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
SAP09P
(Complement to type SAP09N)
Equivalent
circuit
D
R: 70Ω Typ.
E
Emitter resistor
RE: 0.22Ω Typ.
S
B
C
Application:
Audio
sElectrical
Characteristics
Symbol
I
CBO
I
EBO
V
CEO
h
FE
V
V
CE (sat)
V
BE(sat)
V
BE
Di V
F
R
E
Conditions
V
CE
= –150V
V
EB
= – 5V
I
C
= – 30mA
V
CE
= – 4V, I
C
= – 6A
I
C
= – 6A, I
B
= – 6mA
I
C
= – 6A, I
B
= – 6mA
V
CE
= – 20V, I
C
= – 40mA
I
F
= 2.5mA
I
E
=1A
0.176
1230
1580
0.22
0.264
–150
5000
20000
–2.0
–2.5
V
V
mV
mV
Ratings
min
typ
max
sAbsolute
maximum ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Di I
F
Tj
Tstg
Ratings
150
–150
–5
–10
–1
80 ( Tc=25°C)
10
150
–40 to +150
(Ta=25°C)
Unit
V
V
V
A
A
W
mA
°C
°C
( Ta = 25°C )
Unit
External Dimensions
3.3
±
0.2
15.4
±
0.3
9.9
±
0.2
φ
3.2
±
0.2
5
±
0.2
(Unit: mm)
4.5
±
0.2
1.6
±
0.2
–100
–100
µA
µA
V
3.4max
a
b
1
±
0.1
(41)
(2.5)
0.65
–0.1
+0.2
0.8
–0.1
+0.2
2.54
±
0.1
3.81
±
0.1
(7.62)
(12.7)
17.8
±
0.3
4
±
0.1
2.54
±
0.1
3.81
±
0.1
(18)
1.35
–0.1
+0.2
0.65
–0.1
V
h
FE
Rank O (5000 to 12000), Y (8000 to 20000)
E S
C
D B
Weight: Approx 8.3g
a. Part No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
–2.0mA
–2.5mA
–10m
A
–1.
3
mA
V
CE(
sat
)
– I
B
Characteristics
(Typical)
Collector-Emitter Saturation Voltage V
CE(
sat
)
(V)
–3
–10
I
C
– V
BE
Temperature Characteristics
(Typical)
(V
CE
= –4V)
–10
–1.0mA
–0.8mA
–1.5mA
–1.8mA
–8
–8
–2
I
C
= –8A
–6A
–4A
–1
Collector Current I
C
(A)
–0.5mA
Collector Current I
C
(A)
–6
–6
–0.3mA
–4
I
B
= –0.2mA
–2
–4
125°C
25°C
–2
–30°C
0
0
–2
–4
–6
0
–0.3
–1
–5
–10
–50
–100
0
0
–1
–2
2
±
0.1
+0.2
(36°)
7
±
0.2
22
±
0.3
23
±
0.3
28
±
0.3
–3
Collector-Emitter Voltage V
CE
( V)
Base Current I
B
(mA)
Base-Emitter Voltage V
BE
(V)
h
FE
– I
C
Characteristics
(Typical)
DC Current Gain h
FE
125°C
10000
5000
25°C
–30°C
j-a
(°C/W)
j-a
t
3
Characteristics
50000
( V
CE
= –4V )
Transient Thermal Resistance
1
0.5
1000
500
200
–0.03
0.1
1
5
10
50
100
500 1000 2000
–0.1
–0.5
–1
–5
–10
Collector Current I
C
(A)
Time t (ms)
Safe Operating Area
(Single Pulse)
–30
80
P
C
– Ta Derating
–10
10
Collector Current I
C
(A)
–5
D.
10
m
s
0m
s
Maximum Power Dissipation Pc (W)
60
W
ith
C
In
fin
ite
a
he
ts
–1
–0.5
40
k
in
Without Heatsink
Natural Cooling
–0.1
–0.05
–3
20
–5
–10
–50
–100
–200
3.5
0
Without Heatsink
0
25
50
75
100
125
150
Collector-Emitter Voltage V
CE
( V)
Ambient Temperature Ta (°C)
166

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