AUTOMOTIVE GRADE
AUIRLR3114Z
AUIRLU3114Z
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
I
D
I
D
(Silicon Limited)
(Package Limited)
Features
Advanced Process Technology
Ultra Low On-Resistance
Logic Level Gate Drive
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
typ.
max.
40V
4.9m
6.5m
130A
42A
D
D
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a wide
variety of other applications.
G
S
G
S
D
D-Pak
AUIRLR3114Z
I-Pak
AUIRLU3114Z
G
Gate
D
Drain
S
Source
Base part number
AUIRLU3114Z
AUIRLR3114Z
Package Type
I-Pak
D-Pak
Standard Pack
Form
Quantity
Tube
75
Tube
75
Tape and Reel Left
3000
Orderable Part Number
AUIRLU3114Z
AUIRLR3114Z
AUIRLR3114ZTRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
E
AS
(Tested)
I
AR
E
AR
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
130
89
42
500
140
0.95
± 16
130
260
See Fig.15,16, 12a, 12b
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
°C
Thermal Resistance
Symbol
R
JC
R
JA
R
JA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mount)
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
1.05
50
110
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification
standards can be found at
www.infineon.com
1
2015-10-29
Static @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
V
(BR)DSS
/T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
AUIRLR/U3114Z
Min. Typ. Max. Units
Conditions
40
––– –––
V V
GS
= 0V, I
D
= 250µA
––– 0.032 ––– V/°C Reference to 25°C, I
D
= 1mA
–––
3.9
4.9
V
GS
= 10V, I
D
= 42A
m
–––
5.2
6.5
V
GS
= 4.5V, I
D
= 42A
1.0
–––
2.5
V V
DS
= V
GS
, I
D
= 100µA
98
––– –––
S V
DS
= 10V, I
D
= 42A
––– –––
20
V
DS
= 40 V, V
GS
= 0V
µA
––– ––– 250
V
DS
= 40V,V
GS
= 0V,T
J
=125°C
––– ––– 100
V
GS
= 16V
nA
––– ––– -100
V
GS
= -16V
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
40
12
18
25
140
33
50
4.5
7.5
3810
650
350
2390
580
820
56
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
I
D
= 42A
nC
V
DS
= 20V
V
GS
= 4.5V
V
DD
= 20V
I
D
= 42A
ns
R
G
= 3.7
V
GS
= 4.5V
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
pF
V
GS
= 0V, V
DS
= 1.0V ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 32V ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 32V
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V T
J
= 25°C,I
S
= 42A,V
GS
= 0V
ns T
J
= 25°C ,I
F
= 42A, V
DD
= 20V
nC di/dt = 100A/µs
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
C
oss
Output Capacitance
C
oss
Output Capacitance
Effective Output Capacitance
C
oss eff.
Diode Characteristics
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
t
on
Forward Turn-On Time
Notes:
Typ. Max. Units
–––
–––
–––
30
27
42
500
1.3
45
41
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Limited by T
Jmax ,
starting T
J
= 25°C, L = 0.15mH, R
G
= 25, I
AS
= 42A, V
GS
=10V. Part not recommended for use above this value.
Pulse width
1.0ms;
duty cycle
2%.
oss
eff. is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
C
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
This value determined from sample failure population. 100% tested to this value in production.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994 .
R
is measured at T
J
approximately 90°C
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 42A. Note that current
limitations arising from heating of the device leads may occur with some lead mounting arrangements
.
2
2015-10-29
AUIRLR/U3114Z
1000
TOP
VGS
15V
10V
8.0V
4.5V
3.5V
3.0V
2.7V
2.5V
1000
TOP
VGS
15V
10V
8.0V
4.5V
3.5V
3.0V
2.7V
2.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
2.5V
1
2.5V
0.1
0.1
1
60µs PULSE WIDTH
Tj = 25°C
10
100
60µs PULSE WIDTH
Tj = 175°C
1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig. 1
Typical Output Characteristics
Fig. 2
Typical Output Characteristics
1000
200
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current (A)
T J = 25°C
150
100
T J = 175°C
10
T J = 25°C
100
T J = 175°C
50
V DS = 10V
380µs PULSE WIDTH
0
0
20
40
60
80
100
ID ,Drain-to-Source Current (A)
1
VDS = 15V
60µs
PULSE WIDTH
0.1
1
2
3
4
5
6
7
VGS, Gate-to-Source Voltage (V)
Fig. 3
Typical Transfer Characteristics
Fig. 4
Typical Forward Trans conductance
Vs. Drain Current
2015-10-29
3
AUIRLR/U3114Z
100000
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
6.0
ID = 42A
5.0
4.0
3.0
2.0
1.0
0.0
VDS = 32V
VDS = 20V
C, Capacitance (pF)
10000
Ciss
C oss
Crss
VDS = 8.0V
1000
100
1
10
VDS , Drain-to-Source Voltage (V)
100
0
10
20
30
40
50
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000
10000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1000
100µsec
100
1msec
10msec
Tc = 25°C
Tj = 175°C
Single Pulse
1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
1
10
VDS , Drain-to-Source Voltage (V)
100
VSD , Source-to-Drain Voltage (V)
ISD, Reverse Drain Current (A)
100
T J = 175°C
10
T J = 25°C
ID, Drain-to-Source Current (A)
10
VGS = 0V
1.0
DC
Fig. 7
Typical Source-to-Drain Diode
Forward Voltage
4
Fig 8.
Maximum Safe Operating Area
2015-10-29
AUIRLR/U3114Z
140
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 42A
120
ID, Drain Current (A)
Limited By Package
VGS = 10V
100
80
60
40
20
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140160 180
T J , Junction Temperature (°C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10.
Normalized On-Resistance
Vs. Temperature
10
Thermal Response ( Z thJC ) °C/W
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
R
1
R
1
J
1
2
R
2
R
2
R
3
R
3
3
R
4
R
4
C
1
2
3
4
4
C
Ri (°C/W)
0.0350
0.2433
0.4851
0.2867
J
i
(sec)
0.000013
0.000077
0.001043
0.004658
0.1
0.01
Ci=
iRi
Ci=
iRi
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
0.001
1E-006
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
2015-10-29
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