AUIRLR3114ZTRR datasheet, PDF - EEWORLD Datasheet

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AUIRLR3114ZTRR: DescriptionMOSFET AUTO 40V 1 N-CH HEXFET 4.5mOhms; CategoryDiscrete semiconductor The transistor; File Size691KB，12 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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MOSFET AUTO 40V 1 N-CH HEXFET 4.5mOhms

AUIRLR3114ZTRR Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Infineon
package instruction	ROHS COMPLIANT, PLASTIC, DPAK-3
Reach Compliance Code	compliant
ECCN code	EAR99
Is Samacsys	N
Other features	AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas)	260 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	40 V
Maximum drain current (Abs) (ID)	42 A
Maximum drain current (ID)	42 A
Maximum drain-source on-resistance	0.0065 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252AA
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	140 W
Maximum pulsed drain current (IDM)	500 A
surface mount	YES
Terminal surface	MATTE TIN OVER NICKEL
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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AUTOMOTIVE GRADE

AUIRLR3114Z

AUIRLU3114Z

HEXFET

Power MOSFET

DSS

DS(on)

(Silicon Limited)

(Package Limited)

Features



Advanced Process Technology



Ultra Low On-Resistance



Logic Level Gate Drive



175°C Operating Temperature



Fast Switching



Repetitive Avalanche Allowed up to Tjmax



Lead-Free, RoHS Compliant



Automotive Qualified *

typ.

max.

40V

4.9m

6.5m

130A

42A

Description

Specifically designed for Automotive applications, this HEXFET®

Power MOSFET utilizes the latest processing techniques to

achieve extremely low on-resistance per silicon area. Additional

features of this design are a 175°C junction operating temperature,

fast switching speed and improved repetitive avalanche rating.

These features combine to make this design an extremely efficient

and reliable device for use in Automotive applications and a wide

variety of other applications.

D-Pak

AUIRLR3114Z

I-Pak

AUIRLU3114Z

Gate

Drain

Source

Base part number

AUIRLU3114Z

AUIRLR3114Z

Package Type

I-Pak

D-Pak

Standard Pack

Form

Quantity

Tube

Tape and Reel Left

3000

Orderable Part Number

AUIRLU3114Z

AUIRLR3114Z

AUIRLR3114ZTRL

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress

ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not

implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance

and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless

otherwise specified.

Symbol

@ T

= 25°C

@ T

= 100°C

@ T

= 25°C

(Tested)

STG

Parameter

Continuous Drain Current, V

@ 10V (Silicon Limited)

Continuous Drain Current, V

@ 10V (Silicon Limited)

Continuous Drain Current, V

@ 10V (Package Limited)

Pulsed Drain Current



Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally Limited)



Single Pulse Avalanche Energy Tested Value



Avalanche Current



Repetitive Avalanche Energy



Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case)

Max.

130

89

500

140

0.95

± 16

130

260

See Fig.15,16, 12a, 12b

-55 to + 175

300

Units

W/°C

°C

Thermal Resistance

Symbol

JC

JA

Parameter

Junction-to-Case

Junction-to-Ambient ( PCB Mount)



Junction-to-Ambient

Typ.

–––

Max.

1.05

110

Units

°C/W

HEXFET® is a registered trademark of Infineon.

*Qualification

standards can be found at

www.infineon.com

2015-10-29

AUIRLR3114ZTRR Related Products

	AUIRLR3114ZTRR	AUIRLR3114ZTRL	AUIRLU3114Z	AUIRLR3114Z
Description	MOSFET AUTO 40V 1 N-CH HEXFET 4.5mOhms	MOSFET AUTO 40V 1 N-CH HEXFET 4.5mOhms	MOSFET N-CHANNEL 30 / 40	MOSFET AUTO 40V 1 N-CH HEXFET 4.5mOhms
Is it Rohs certified?	conform to	conform to	conform to	conform to
package instruction	ROHS COMPLIANT, PLASTIC, DPAK-3	ROHS COMPLIANT, PLASTIC, DPAK-3	ROHS COMPLIANT, PLASTIC, IPAK-3	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99
Other features	AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE	AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE	AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE	AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas)	260 mJ	260 mJ	260 mJ	260 mJ
Shell connection	DRAIN	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	40 V	40 V	40 V	40 V
Maximum drain current (Abs) (ID)	42 A	42 A	42 A	42 A
Maximum drain current (ID)	42 A	42 A	42 A	42 A
Maximum drain-source on-resistance	0.0065 Ω	0.0065 Ω	0.0065 Ω	0.0065 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252AA	TO-252AA	TO-251AA	TO-252AA
JESD-30 code	R-PSSO-G2	R-PSSO-G2	R-PSIP-T3	R-PSSO-G2
JESD-609 code	e3	e3	e3	e3
Humidity sensitivity level	1	1	1	1
Number of components	1	1	1	1
Number of terminals	2	2	3	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	IN-LINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260	260	260
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	140 W	140 W	140 W	140 W
Maximum pulsed drain current (IDM)	500 A	500 A	500 A	500 A
surface mount	YES	YES	NO	YES
Terminal surface	MATTE TIN OVER NICKEL	Matte Tin (Sn) - with Nickel (Ni) barrier	Matte Tin (Sn) - with Nickel (Ni) barrier	Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal form	GULL WING	GULL WING	THROUGH-HOLE	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	30	30	30	30
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	-	1
Factory Lead Time	-	26 weeks	26 weeks	26 weeks

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