APTM50H10FT3G datasheet, PDF - EEWORLD Datasheet

APTM50H10FT3G: DescriptionDiscrete Semiconductor Modules Power Module - Mosfet; CategoryDiscrete semiconductor The transistor; File Size518KB，8 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com; Environmental Compliance

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Discrete Semiconductor Modules Power Module - Mosfet

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Microsemi
package instruction	FLANGE MOUNT, R-XUFM-X25
Contacts	25
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	1600 mJ
Shell connection	ISOLATED
Configuration	COMPLEX
Minimum drain-source breakdown voltage	500 V
Maximum drain current (ID)	37 A
Maximum drain-source on-resistance	0.12 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-XUFM-X25
JESD-609 code	e1
Humidity sensitivity level	1
Number of components	4
Number of terminals	25
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	140 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN SILVER COPPER
Terminal form	UNSPECIFIED
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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