71124S20YG8 datasheet, PDF - EEWORLD Datasheet

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71124S20YG8: DescriptionSRAM 128Kx8 ASYNCHRONOUS 5.0V STATIC RAM; Categorystorage storage; File Size84KB，8 Pages; ManufacturerIDT (Integrated Device Technology); Environmental Compliance

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71124S20YG8 Overview

SRAM 128Kx8 ASYNCHRONOUS 5.0V STATIC RAM

71124S20YG8 Parametric

Parameter Name	Attribute value
Brand Name	Integrated Device Technology
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	IDT (Integrated Device Technology)
Parts packaging code	SOJ
package instruction	SOJ, SOJ32,.44
Contacts	32
Manufacturer packaging code	PBG32
Reach Compliance Code	compliant
ECCN code	3A991.B.2.A
Is Samacsys	N
Maximum access time	20 ns
I/O type	COMMON
JESD-30 code	R-PDSO-J32
JESD-609 code	e3
length	20.955 mm
memory density	1048576 bit
Memory IC Type	STANDARD SRAM
memory width	8
Humidity sensitivity level	3
Number of functions	1
Number of terminals	32
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	128KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	SOJ
Encapsulate equivalent code	SOJ32,.44
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
power supply	5 V
Certification status	Not Qualified
Maximum seat height	3.683 mm
Maximum standby current	0.01 A
Minimum standby current	4.5 V
Maximum slew rate	0.14 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Matte Tin (Sn) - annealed
Terminal form	J BEND
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	10.16 mm
Base Number Matches	1

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CMOS Static RAM

1 Meg (128K x 8-Bit)

Revolutionary Pinout

Features

Description

IDT71124

◆

128K x 8 advanced high-speed CMOS static RAM

JEDEC revolutionary pinout (center power/GND) for

reduced noise.

Equal access and cycle times

– Commercial: 12/15/20ns

– Industrial: 15/20ns

One Chip Select plus one Output Enable pin

Bidirectional inputs and outputs directly TTL-compatible

Low power consumption via chip deselect

Available in a 32-pin 400 mil Plastic SOJ.

The IDT71124 is a 1,048,576-bit high-speed static RAM organized as

128K x 8. It is fabricated using high-performance, high-reliability CMOS

technology. This state-of-the-art technology, combined with innovative

circuit design techniques, provides a cost-effective solution for high-speed

memory needs. The JEDEC centerpower/GND pinout reduces noise

generation and improves system performance.

The IDT71124 has an output enable pin which operates as fast as 6ns,

with address access times as fast as 12ns available. All bidirectional inputs

and outputs of the IDT71124 are TTL-compatible and operation is from

a single 5V supply. Fully static asynchronous circuitry is used; no clocks

or refreshes are required for operation.

The IDT71124 is packaged in a 32-pin 400 mil Plastic SOJ.

Functional Block Diagram

•

ADDRESS

DECODER

•

1,048,576-BIT

MEMORY ARRAY

I/O

- I/O

•

I/O CONTROL

CONTROL

LOGIC

3514 drw 01

APRIL 2013

DSC-3514/11

71124S20YG8 Related Products

	71124S20YG8	71124S15YG8	71124S15YG	71124S15YGI	71124S20YGI
Description	SRAM 128Kx8 ASYNCHRONOUS 5.0V STATIC RAM	SRAM 128Kx8 ASYNCHRONOUS 5.0V STATIC RAM	SRAM 128Kx8 ASYNCHRONOUS 5.0V STATIC RAM	SRAM 128Kx8 ASYNCHRONOUS 5.0V STATIC RAM	SRAM 128Kx8 ASYNCHRONOUS 5.0V STATIC RAM
Brand Name	Integrated Device Technology	Integrated Device Technology	Integrated Device Technology	Integrated Device Technology	Integrated Device Technology
Is it lead-free?	Lead free	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to
Maker	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)
Parts packaging code	SOJ	SOJ	SOJ	SOJ	SOJ
package instruction	SOJ, SOJ32,.44	SOJ, SOJ32,.44	SOJ, SOJ32,.44	SOJ, SOJ32,.44	SOJ, SOJ32,.44
Contacts	32	32	32	32	32
Manufacturer packaging code	PBG32	PBG32	PBG32	PBG32	PBG32
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant
ECCN code	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
Maximum access time	20 ns	15 ns	15 ns	15 ns	20 ns
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-PDSO-J32	R-PDSO-J32	R-PDSO-J32	R-PDSO-J32	R-PDSO-J32
JESD-609 code	e3	e3	e3	e3	e3
length	20.955 mm	20.955 mm	20.955 mm	20.955 mm	20.955 mm
memory density	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	8	8	8	8	8
Humidity sensitivity level	3	3	3	3	3
Number of functions	1	1	1	1	1
Number of terminals	32	32	32	32	32
word count	131072 words	131072 words	131072 words	131072 words	131072 words
character code	128000	128000	128000	128000	128000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	85 °C	85 °C
organize	128KX8	128KX8	128KX8	128KX8	128KX8
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	SOJ	SOJ	SOJ	SOJ	SOJ
Encapsulate equivalent code	SOJ32,.44	SOJ32,.44	SOJ32,.44	SOJ32,.44	SOJ32,.44
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	260	260	260	260	260
power supply	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	3.683 mm	3.683 mm	3.683 mm	3.683 mm	3.683 mm
Maximum standby current	0.01 A	0.01 A	0.01 A	0.01 A	0.01 A
Minimum standby current	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Maximum slew rate	0.14 mA	0.155 mA	0.155 mA	0.155 mA	0.14 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V
surface mount	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL
Terminal surface	Matte Tin (Sn) - annealed	Matte Tin (Sn) - annealed	Matte Tin (Sn) - annealed	Matte Tin (Sn) - annealed	Matte Tin (Sn) - annealed
Terminal form	J BEND	J BEND	J BEND	J BEND	J BEND
Terminal pitch	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
width	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm
Is Samacsys	N	-	N	N	-
Base Number Matches	1	1	1	1	-

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