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IPD65R250E6

Description
MOSFET N-Ch 700V 16.1A DPAK-2
CategoryDiscrete semiconductor    The transistor   
File Size2MB,15 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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IPD65R250E6 Overview

MOSFET N-Ch 700V 16.1A DPAK-2

IPD65R250E6 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
Parts packaging codeTO-252
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codecompliant
Avalanche Energy Efficiency Rating (Eas)290 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage650 V
Maximum drain-source on-resistance0.25 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252
JESD-30 codeR-PSSO-G2
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)46 A
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
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